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1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications
1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications
Specifications
Pd - Power Dissipation :
441W
Td(off) :
262ns
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
93pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.3V@1mA
Gate Charge(Qg) :
346nC@15V
Reverse Recovery Time(trr) :
94ns
Switching Energy(Eoff) :
2.3mJ
Turn-On Energy (Eon) :
1.3mJ
Input Capacitance(Cies) :
3.98nF
Pulsed Current- Forward(Ifm) :
160A
Output Capacitance(Coes) :
157pF
Description :
441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS
Mfr. Part # :
IKW40N120H3-HXY
Model Number :
IKW40N120H3-HXY
Package :
TO-247
Description

Product Overview

The IKW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC). The device offers a positive temperature coefficient, fast switching, low VCE(sat), and is reliable and rugged, meeting AEC-Q101 qualification standards. It operates at temperatures up to 175C and is available in Halogen Free and Green (RoHS Compliant) versions.

Product Attributes

  • Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Certifications: AEC-Q101 Qualified, RoHS Compliant
  • Package Type: TO-247
  • Device Per Unit Quantity: 30 (Tube)

Technical Specifications

ParameterValueUnitDescription
VCES1200VCollector-Emitter Voltage
IC40ACollector Current @TC=100C
IC (25C)80ACollector Current @TC=25C
VCE(sat).typ1.70VCollector-Emitter Saturation Voltage Typical
PD (@TC=25C)441WPower Dissipation @TC=25C
TJmax, Tstg-55 to 175Operating Junction and Storage Temperature Range
RJC (IGBT)0.34/WJunction-to-Case Thermal Resistance (IGBT)
RJA40/WJunction-to-Ambient Thermal Resistance
VGE(TH)4.3 - 6.3VGate Threshold Voltage
VF (IF=40A, TJ=25C)1.85VDiode Forward Voltage
ICES (VCE=1200V, VGE=0V)10ACollector-Emitter Leakage Current
Cies3980pFInput Capacitance
Qg346nCGate Charge
td(on) (TJ=25C)25nsTurn-on Delay Time
tr (TJ=25C)28nsRise Time
td(off) (TJ=25C)262nsTurn-Off Delay Time
tf (TJ=25C)149nsFall Time
Eon (TJ=25C)1.30mJTurn-On Switching Loss
Eoff (TJ=25C)2.30mJTurn-Off Switching Loss
Trr (TJ=25C)94nsReverse Recovery Time
Qrr (TJ=25C)225nCReverse Recovery Charge
Irrm (TJ=25C)9.7AReverse Recovery Current

2509181737_HXY-MOSFET-IKW40N120H3-HXY_C49003403.pdf

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1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications

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Product Detail
Pd - Power Dissipation :
441W
Td(off) :
262ns
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
93pF
IGBT Type :
FS (Field Stop)
Contact Supplier
1200V 40A HXY MOSFET IKW40N120H3-HXY IGBT featuring fast switching low VCEsat ideal for PTC and motor drive applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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