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Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage
Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage
Specifications
Pd - Power Dissipation :
305W
Td(off) :
180ns
Td(on) :
21ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3.2V@0.5mA
Gate Charge(Qg) :
120nC@15V
Operating Temperature :
-40℃~+175℃
Reverse Recovery Time(trr) :
57ns
Switching Energy(Eoff) :
180uJ
Turn-On Energy (Eon) :
520uJ
Input Capacitance(Cies) :
3nF
Pulsed Current- Forward(Ifm) :
150A
Output Capacitance(Coes) :
65pF
Description :
305W 650V TO-247-3 Single IGBTs RoHS
Mfr. Part # :
IKW50N65H5
Model Number :
IKW50N65H5
Package :
TO-247-3
Description

Product Overview

The IKW50N65H5 is a high-speed fifth-generation IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and low gate charge, it is designed for demanding applications in solar converters, uninterruptible power supplies, welding converters, and mid to high-range switching frequency converters.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM 5
  • Diode Type: RAPID 1
  • Certifications: JEDEC qualified, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEIC (TC=25C)VCEsat (Tvj=25C)TvjmaxMarkingPackage
IKW50N65H5650V80.0A1.65V175CK50EH5PG-TO247-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 50.0A, Tvj = 25C1.65V
Diode forward voltageVFVGE = 0V, IF = 27.0A, Tvj = 25C1.45V
Gate-emitter threshold voltageVGE(th)IC = 0.50mA, VCE = VGE3.2 - 4.8V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 25C40.0A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 50.0A62.0S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz3000pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz65pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz11pF
Gate chargeQGVCC = 520V, IC = 50.0A, VGE = 15V120.0nC
Internal emitter inductanceLEmeasured 5mm from case13.0nH
Turn-on delay time (IGBT)td(on)Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.021ns
Rise time (IGBT)trTvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.015ns
Turn-off delay time (IGBT)td(off)Tvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.0180ns
Fall time (IGBT)tfTvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.018ns
Turn-on energy (IGBT)EonTvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.00.52mJ
Turn-off energy (IGBT)EoffTvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.00.18mJ
Total switching energy (IGBT)EtsTvj = 25C, VCC = 400V, IC = 25.0A, RG = 12.00.70mJ
Diode reverse recovery timetrrTvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s57ns
Diode reverse recovery chargeQrrTvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s0.57C
Diode peak reverse recovery currentIrrmTvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s16.7A
Diode peak rate of fall of reverse recovery currentdirr/dtTvj = 25C, VR = 400V, IF = 25.0A, diF/dt = 1200A/s-415A/s
IGBT thermal resistance, junction - caseRth(j-c)0.50K/W
Diode thermal resistance, junction - caseRth(j-c)1.50K/W
Thermal resistance junction - ambientRth(j-a)40K/W
Maximum junction temperatureTvjmax175C
Storage temperatureTstg-55...+150C

2411041601_Infineon-IKW50N65H5_C476108.pdf

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Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage

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Product Detail
Pd - Power Dissipation :
305W
Td(off) :
180ns
Td(on) :
21ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3.2V@0.5mA
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Industrial grade IGBT Infineon IKW50N65H5 with 80 ampere collector current and low saturation voltage

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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