MachineU > China Products
Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics
Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics
Specifications
Pd - Power Dissipation :
70W
Td(off) :
70ns
Td(on) :
40ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
28pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5V@0.3mA
Gate Charge(Qg) :
53nC@15V
Operating Temperature :
-40℃~+150℃
Output Capacitance(Coes) :
36pF
Switching Energy(Eoff) :
700uJ
Turn-On Energy (Eon) :
700uJ
Description :
70W 1.2kV TO-247-3 Single IGBTs RoHS
Mfr. Part # :
IGW08T120
Model Number :
IGW08T120
Package :
TO-247-3
Description

Product Overview

The IGW08T120 is a Low Loss IGBT from Infineon's TrenchStop Series, utilizing TrenchStop and Fieldstop technology for 1200V applications. It offers short circuit withstand time of 10s and is designed for frequency converters and uninterrupted power supplies. Key advantages include very tight parameter distribution, high ruggedness, temperature-stable behavior, easy parallel switching capability due to positive temperature coefficient in VCE(sat), low EMI, and low gate charge. This product is qualified according to JEDEC standards, Pb-free, and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Series: TrenchStop
  • Technology: TrenchStop and Fieldstop, NPT
  • Certifications: JEDEC, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEIC (TC=25C)IC (TC=100C)VCE(sat) (Tj=25C)Tj,maxMarking CodePackage
IGW08T1201200V16A8A1.7V150CG08T120PG-TO-247-3
ParameterSymbolConditionsValueUnit
Collector-emitter voltageV CE1200V
DC collector currentI CTC = 25C16A
DC collector currentI CTC = 100C8A
Pulsed collector current, tp limited by TjmaxI C p u l s24A
Gate-emitter voltageV G E20V
Short circuit withstand timet SCVGE = 15V, VCC 1200V, Tj 150C10s
Power dissipationP to tTC = 25C70W
Operating junction temperatureT j-40...+150C
Storage temperatureT st g-55...+150C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s260C
IGBT thermal resistance, junction caseR t h JC1.7K/W
IGBT thermal resistance, junction ambientR t h JA40K/W
Collector-emitter breakdown voltageV (BR )C ESV G E=0V, I C=0.5mA1200-
Collector-emitter saturation voltageVC E(sa t )V G E = 15V, I C=8A, T j=25C1.7V
Collector-emitter saturation voltageVC E(sa t )V G E = 15V, I C=8A, T j=125C2.0V
Collector-emitter saturation voltageVC E(sa t )V G E = 15V, I C=8A, T j=150C2.2V
Gate-emitter threshold voltageV G E( th )I C=0.3mA,VC E=VG E5.0 / 5.8 / 6.5V
Zero gate voltage collector currentI C ESVC E=1200V, V G E=0V, T j=25C0.2mA
Zero gate voltage collector currentI C ESVC E=1200V, V G E=0V, T j=150C2.0mA
Gate-emitter leakage currentI G E SVC E=0V,V GE=20V100nA
Transconductanceg f sVC E=20V, I C=8A5S
Integrated gate resistorR G i n tnone
Input capacitanceC i s s600pF
Output capacitanceC o s s36pF
Reverse transfer capacitanceC r s sVC E=25V, V G E=0V, f=1MHz28pF
Gate chargeQ Ga teVC C=960V, I C=8A, V G E=15V53nC
Internal emitter inductance measured 5mm (0.197 in.) from caseL E13nH
Short circuit collector currentI C (SC )V G E=15V,t SC10s, VC C = 600V, T j = 25C48A
Turn-on delay timet d (o n )Inductive Load, Tj=25 C40ns
Rise timet rInductive Load, Tj=25 C23ns
Turn-off delay timet d (o f f )Inductive Load, Tj=25 C450ns
Fall timet fInductive Load, Tj=25 C70ns
Turn-on energyEo nInductive Load, Tj=25 C0.67mJ
Turn-off energyEo ffInductive Load, Tj=25 C0.7mJ
Total switching energyE t sInductive Load, Tj=25 C1.37mJ
Turn-on delay timet d (o n )Inductive Load, Tj=150 C40ns
Rise timet rInductive Load, Tj=150 C26ns
Turn-off delay timet d (o f f )Inductive Load, Tj=150 C570ns
Fall timet fInductive Load, Tj=150 C140ns
Turn-on energyEo nInductive Load, Tj=150 C1.08mJ
Turn-off energyEo ffInductive Load, Tj=150 C1.2mJ
Total switching energyE t sInductive Load, Tj=150 C2.28mJ

2410121609_Infineon-IGW08T120_C536088.pdf

Send your message to this supplier
Send Now

Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics

Ask Latest Price
Product Detail
Pd - Power Dissipation :
70W
Td(off) :
70ns
Td(on) :
40ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
28pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5V@0.3mA
Contact Supplier
Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single IGBTs
MachineU China Products
Contact Supplier
Submit Requirement