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TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design
TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design
Specifications
Pd - Power Dissipation :
349W
Td(off) :
265ns
Td(on) :
27ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
90pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.2V@1.0mA
Gate Charge(Qg) :
120nC@15V
Operating Temperature :
-40℃~+175℃
Pulsed Current- Forward(Ifm) :
100A
Reverse Recovery Time(trr) :
195ns
Switching Energy(Eoff) :
1.35mJ
Turn-On Energy (Eon) :
1.55mJ
Description :
349W 1.2kV TO-247-3 Single IGBTs RoHS
Mfr. Part # :
IKW25N120T2
Model Number :
IKW25N120T2
Package :
TO-247-3
Description

IKW25N120T2 TrenchStop 2nd generation Series

The IKW25N120T2 is a 1200V IGBT from Infineon's TrenchStop 2nd generation series, designed for high-performance applications such as frequency converters and uninterrupted power supplies. It features a short circuit withstand time of 10s and offers excellent ruggedness and temperature-stable behavior. The device is easy to parallel due to a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE Diode. It is qualified according to JEDEC standards and is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Series: TrenchStop 2nd generation
  • Certifications: JEDEC, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEICVCE(sat),Tj=25CTj,maxMarking CodePackage
IKW25N120T21200V25A1.7V175CK25T1202PG-TO-247-3
ParameterSymbolValueUnitConditions
Collector-emitter voltageVCE1200V-
DC collector current (Tj=150C)IC50 / 25ATC = 25C / TC = 110C
Pulsed collector current, tp limited by TjmaxICpuls100A-
Diode forward current (Tj=150C)IF40 / 25ATC = 25C / TC = 110C
Diode pulsed current, tp limited by TjmaxIFpuls100A-
Gate-emitter voltageVGE20V-
Short circuit withstand timetSC10sVGE = 15V, VCC 600V, Tj, start 175C
Power dissipationPtot349WTC = 25C
Operating junction temperatureTj-40...+175C-
Storage temperatureTstg-55...+150C-
Soldering temperature, 1.6mm from case for 10s-260CWavesoldering only, temperature on leads only
IGBT thermal resistance, junction caseRthJC0.43K/W-
Diode thermal resistance, junction caseRthJCD0.81K/W-
Thermal resistance, junction ambientRthJA40K/W-
Collector-emitter breakdown voltageV(BR)CES1200VVGE=0V, IC=500A
Collector-emitter saturation voltageVCE(sat)1.7 / 2.1 / 2.2VVGE = 15V, IC=25A, Tj=25C / 150C / 175C
Diode forward voltageVF1.65 / 1.7 / 2.2VVGE=0V, IF=25A, Tj=25C / 150C / 175C
Gate-emitter threshold voltageVGE(th)5.2 / 5.8 / 6.4VIC=1.0mA,VCE=VGE
Zero gate voltage collector currentICE- / 0.4 / 4.0 / 20mAVCE=1200V, VGE=0V, Tj=25C / 150C / 175C
Gate-emitter leakage currentIGE-200nAVCE=0V,VGE=20V
Transconductancegfs-13.5SVCE=20V, IC=25A
Input capacitanceCiss-1600pFVCE=25V, VGE=0V, f=1MHz
Output capacitanceCoss-155pF-
Reverse transfer capacitanceCrss-90pF-
Gate chargeQg-120nCVCC=960V, IC=25A, VGE=15V
Internal emitter inductanceLE-13nHmeasured 5mm from case
Short circuit collector currentIC(SC)150 / 115AVGE=15V,tSC10s, VCC = 600V, Tj,start = 25C / 175C
Turn-on delay timetd(on)27nsTj=25C, VCC=600V,IC=25A, VGE=0/15V, RG=16.4
Rise timetr20ns-
Turn-off delay timetd(off)265ns-
Fall timetf95ns-
Turn-on energyEon1.55mJ-
Turn-off energyEoff1.35mJ-
Total switching energyEts2.9mJ-
Diode reverse recovery timetrr195nsTj=25C, VR=600V, IF=25A, diF/dt=1050A/s
Diode reverse recovery chargeQrr2.05C-
Diode peak reverse recovery currentIrr20A-
Diode peak rate of fall of reverse recovery current during tbdirr/dt475A/s-
ParameterSymbolValueUnitConditions
Turn-on delay timetd(on)25nsTj=175C, VCC=600V,IC=25A, VGE=0/15V, RG= 16.4
Rise timetr24ns-
Turn-off delay timetd(off)340ns-
Fall timetf164ns-
Turn-on energyEon2.25mJ-
Turn-off energyEoff2.05mJ-
Total switching energyEts4.3mJ-
Diode reverse recovery timetrr290nsTj=175C, VR=600V, IF=25A, diF/dt=1000A/s
Diode reverse recovery chargeQrr3.65C-
Diode peak reverse recovery currentIrr24A-
Diode peak rate of fall of reverse recovery current during tbdirr/dt330A/s-

2410121529_Infineon-IKW25N120T2_C111026.pdf

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TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design

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Product Detail
Pd - Power Dissipation :
349W
Td(off) :
265ns
Td(on) :
27ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
90pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.2V@1.0mA
Contact Supplier
TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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