MachineU > China Products > Electrical Equipment & Supplies
Field Stop IGBT 600 Volt 40 Amp onsemi FGH40N60SMD Ideal for PFC ESS Welders and Telecom Power Systems
Field Stop IGBT 600 Volt 40 Amp onsemi FGH40N60SMD Ideal for PFC ESS Welders and Telecom Power Systems
Specifications
Td(off) :
92ns
Pd - Power Dissipation :
349W
Td(on) :
12ns
Collector-Emitter Breakdown Voltage (Vces) :
600V
Reverse Transfer Capacitance (Cres) :
50pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3.5V@250uA
Gate Charge(Qg) :
119nC@15V
Operating Temperature :
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr) :
36ns
Switching Energy(Eoff) :
260uJ
Turn-On Energy (Eon) :
870uJ
Input Capacitance(Cies) :
1.88nF
Pulsed Current- Forward(Ifm) :
120A
Output Capacitance(Coes) :
180pF
Description :
IGBT FS (Field Stop) 600V 80A 349W Through Hole TO-247
Mfr. Part # :
FGH40N60SMD
Model Number :
FGH40N60SMD
Package :
TO-247
Description

Product Overview

The FGH40N60SMD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop IGBT technology. It offers optimized performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, telecom, and ESS. Key advantages include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage (1.9V Typ. at 40A), high input impedance, and fast switching (EOFF = 6.5 uJ/A). The device also features tight parameter distribution and is RoHS compliant.

Product Attributes

  • Brand: Fairchild Semiconductor
  • Product Name: FGH40N60SMD
  • Technology: Field Stop IGBT
  • Certifications: RoHS Compliant

Technical Specifications

SymbolParameterTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
VCESCollector to Emitter Voltage600V
VGESGate to Emitter Voltage± 20V
ICCollector Current @ TC = 25°C80A
ICCollector Current @ TC = 100°C40A
ICM (1)Pulsed Collector Current @ TC = 25°C120A
IFDiode Forward Current @ TC = 25°C40A
IFDiode Forward Current @ TC = 100°C20A
IFM (1)Pulsed Diode Maximum Forward Current120A
PDMaximum Power Dissipation @ TC = 25°C349W
PDMaximum Power Dissipation @ TC = 100°C174W
TJOperating Junction Temperature-55+175°C
TstgStorage Temperature Range-55+175°C
TLMaximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds300°C
Thermal Characteristics
RθJC(IGBT)Thermal Resistance, Junction to Case0.43°C/W
RθJC(Diode)Thermal Resistance, Junction to Case1.5°C/W
RθJAThermal Resistance, Junction to Ambient40°C/W
Off Characteristics
BVCESCollector to Emitter Breakdown VoltageVGE = 0V, IC = 250µA600V
ΔBVCES /ΔTJTemperature Coefficient of Breakdown VoltageVGE = 0V, IC = 250µA0.6V/°C
ICESCollector Cut-Off CurrentVCE = VCES, VGE = 0V250µA
IGESG-E Leakage CurrentVGE = VGES, VCE = 0V±400nA
On Characteristics
VGE(th)G-E Threshold VoltageIC = 250µA, VCE = VGE3.54.56.0V
VCE(sat)Collector to Emitter Saturation VoltageIC = 40A, VGE = 15V1.92.5V
VCE(sat)Collector to Emitter Saturation VoltageIC = 40A, VGE = 15V, TC = 175°C2.1V
Dynamic Characteristics
CiesInput CapacitanceVCE = 30V, VGE = 0V, f = 1MHz1880pF
CoesOutput Capacitance180pF
CresReverse Transfer Capacitance50pF
Switching Characteristics (TC = 25°C)
td(on)Turn-On Delay TimeVCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load1216ns
trRise Time2028ns
td(off)Turn-Off Delay Time92120ns
tfFall Time1317ns
EonTurn-On Switching Loss0.871.30mJ
EoffTurn-Off Switching Loss0.260.34mJ
EtsTotal Switching Loss1.131.64mJ
Switching Characteristics (TC = 175°C)
td(on)Turn-On Delay TimeVCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load15ns
trRise Time22ns
td(off)Turn-Off Delay Time116ns
tfFall Time16ns
EonTurn-On Switching Loss0.97mJ
EoffTurn-Off Switching Loss0.60mJ
EtsTotal Switching Loss1.57mJ
Electrical Characteristics of the IGBT (Continued)
QgTotal Gate ChargeVCE = 400V, IC = 40A, VGE = 15V119180nC
QgeGate to Emitter Charge1320nC
QgcGate to Collector Charge5890nC
Electrical Characteristics of the Diode
VFMDiode Forward VoltageIF = 20A, TC = 25°C2.32.8V
VFMDiode Forward VoltageIF = 20A, TC = 175°C1.67V
ErecReverse Recovery EnergyIF =20A, dIF/dt = 200A/µs, TC = 175°C48.9µJ
trrDiode Reverse Recovery TimeTC = 25°C36ns
trrDiode Reverse Recovery TimeTC = 175°C110ns
QrrDiode Reverse Recovery ChargeTC = 25°C46.8nC
QrrDiode Reverse Recovery ChargeTC = 175°C445nC

2410121525_onsemi-FGH40N60SMD_C49512.pdf

Send your message to this supplier
Send Now

Field Stop IGBT 600 Volt 40 Amp onsemi FGH40N60SMD Ideal for PFC ESS Welders and Telecom Power Systems

Ask Latest Price
Product Detail
Td(off) :
92ns
Pd - Power Dissipation :
349W
Td(on) :
12ns
Collector-Emitter Breakdown Voltage (Vces) :
600V
Reverse Transfer Capacitance (Cres) :
50pF
IGBT Type :
FS (Field Stop)
Contact Supplier
Field Stop IGBT 600 Volt 40 Amp onsemi FGH40N60SMD Ideal for PFC ESS Welders and Telecom Power Systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Single FETs, MOSFETs, Bridge Rectifiers, Single Bipolar Transistors
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single IGBTs
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement