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Thermal Management onsemi FGH75T65UPD 650 Volt 75 Amp IGBT with High Junction Temperature Capability
Thermal Management onsemi FGH75T65UPD 650 Volt 75 Amp IGBT with High Junction Temperature Capability
Specifications
Td(off) :
166ns
Pd - Power Dissipation :
375W
Td(on) :
32ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
100pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4V@75mA
Gate Charge(Qg) :
385nC
Operating Temperature :
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr) :
85ns
Switching Energy(Eoff) :
1.2mJ
Turn-On Energy (Eon) :
2.85mJ
Input Capacitance(Cies) :
5.665nF
Pulsed Current- Forward(Ifm) :
225A
Output Capacitance(Coes) :
205pF
Description :
IGBT FS (Field Stop) 650V 150A 375W Through Hole TO-247
Mfr. Part # :
FGH75T65UPD
Model Number :
FGH75T65UPD
Package :
TO-247
Description

Product Overview

Utilizing advanced Field Stop Trench IGBT Technology, ON Semiconductor's FGH75T65UPD-F085 is a 650 V, 75 A IGBT designed for high-performance applications. It offers optimal performance in automotive chargers, solar inverters, UPS, and digital power generators by minimizing conduction and switching losses. Key advantages include a high maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and high input impedance. This device is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive and industrial power systems.

Product Attributes

  • Brand: ON Semiconductor
  • Technology: Field Stop Trench IGBT
  • Compliance: PbFree, RoHS Compliant
  • Certifications: AECQ101 Qualified, PPAP Capable

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
ABSOLUTE MAXIMUM RATINGS
Collector to Emitter VoltageVCES650V
Gate to Emitter VoltageVGES±20V
Collector CurrentICTC = 25°C150A
Collector CurrentICTC = 100°C75A
Pulsed Collector CurrentICM(Note 1)225A
Diode Forward CurrentIFTC = 25°C75A
Diode Forward CurrentIFTC = 100°C50A
Pulsed Diode Maximum Forward CurrentIFM(Note 1)225A
Maximum Power DissipationPDTC = 25°C375W
Maximum Power DissipationPDTC = 100°C187W
Short Circuit Withstand TimeSCWTTC = 25°C5µs
Operating Junction TemperatureTJ-55+175°C
Storage Temperature RangeTstg-55+175°C
Maximum Lead Temperature for Soldering, 1/8 from Case for 5 SecondsTL300°C
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase (IGBT)RJC (IGBT)(Note 2)0.4°C/W
Thermal Resistance, JunctiontoCase (Diode)RJC (Diode)0.86°C/W
Thermal Resistance, JunctiontoAmbient (PCB Mount)RJA(Note 2)40°C/W
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Collector to Emitter Breakdown VoltageBVCESVGE = 0 V, IC = 1 mA650V
Temperature Coefficient of Breakdown Voltage∂BVCES/ ∂TJVGE = 0 V, IC = 1 mA-0.65V/°C
Collector CutOff CurrentICESVCES, VGE = 0 V250µA
Collector CutOff CurrentICES80% * BVCES, 175°C3600µA
GE Leakage CurrentIGESVGE = VGES, VCE = 0 V±400nA
GE Threshold VoltageVGE(th)IC = 75 mA, VCE = VGE4.06.07.5V
Collector to Emitter Saturation VoltageVCE(sat)IC = 75 A, VGE = 15 V1.692.3V
Collector to Emitter Saturation VoltageVCE(sat)IC = 75 A, VGE = 15 V, TC = 175°C2.21V
DYNAMIC CHARACTERISTICS
Input CapacitanceCiesVCE = 30 V, VGE = 0 V, f = 1 MHz5665pF
Output CapacitanceCoes205pF
Reverse Transfer CapacitanceCres100pF
SWITCHING CHARACTERISTICS (TC = 25°C)
TurnOn Delay Timetd(on)VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load3248ns
Rise TimetrVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load4371ns
TurnOff Delay Timetd(off)VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load166216ns
Fall TimetfVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load2433ns
TurnOn Switching LossEonVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load2.854.80mJ
TurnOff Switching LossEoffVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load1.201.60mJ
Total Switching LossEtsVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load4.055.30mJ
SWITCHING CHARACTERISTICS (TC = 175°C)
TurnOn Delay Timetd(on)VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load30ns
Rise TimetrVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load57ns
TurnOff Delay Timetd(off)VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load176ns
Fall TimetfVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load21ns
TurnOn Switching LossEonVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load4.45mJ
TurnOff Switching LossEoffVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load1.60mJ
Total Switching LossEtsVCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load6.05mJ
ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted)
Diode Forward VoltageVFMIF = 50 A, TC = 25°C2.12.6V
Diode Forward VoltageVFMIF = 50 A, TC = 175°C1.7V
Reverse Recovery EnergyErecIF = 50 A, dIF/dt = 200 A/µs, TC = 175°C40µJ
Diode Reverse Recovery TimetrrTC = 25°C4385ns
Diode Reverse Recovery TimetrrTC = 175°C162ns
Diode Reverse Recovery ChargeQrrTC = 25°C83170nC
Diode Reverse Recovery ChargeQrrTC = 175°C805nC

2411220231_onsemi-FGH75T65UPD_C605143.pdf

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Thermal Management onsemi FGH75T65UPD 650 Volt 75 Amp IGBT with High Junction Temperature Capability

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Product Detail
Td(off) :
166ns
Pd - Power Dissipation :
375W
Td(on) :
32ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
100pF
IGBT Type :
FS (Field Stop)
Contact Supplier
Thermal Management onsemi FGH75T65UPD 650 Volt 75 Amp IGBT with High Junction Temperature Capability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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