Specifications
Td(off) :
106ns
Pd - Power Dissipation :
375W
Td(on) :
23ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
11.2pF
Input Capacitance(Cies) :
4.574nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3.4V@75mA
Gate Charge(Qg) :
139nC@15V
Output Capacitance(Coes) :
289.4pF
Switching Energy(Eoff) :
210uJ
Turn-On Energy (Eon) :
610uJ
Description :
375W 650V TO-247-3L Single IGBTs RoHS
Mfr. Part # :
AFGHL75T65SQ
Model Number :
AFGHL75T65SQ
Package :
TO-247-3L
Description

Product Overview

The AFGHL75T65SQ is a Field Stop Trench IGBT from onsemi, utilizing novel 4th generation IGBT technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in various applications where a reverse recovery specification is not required. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage.

Product Attributes

  • Brand: onsemi
  • Certifications: AECQ101 Qualified and PPAP Capable

Technical Specifications

Part NumberDescriptionVCES (V)IC (A)VCE(Sat) (V) @ IC=75ATJ Max (C)Package
AFGHL75T65SQField Stop Trench IGBT650751.6 (Typ.)175TO-247-3L

2410122106_onsemi-AFGHL75T65SQ_C2902240.pdf

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onsemi AFGHL75T65SQ Field Stop Trench IGBT Featuring 75 Amp 650 Volt Rating and Low Saturation Voltage

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Td(off) :
106ns
Pd - Power Dissipation :
375W
Td(on) :
23ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
11.2pF
Input Capacitance(Cies) :
4.574nF
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onsemi AFGHL75T65SQ Field Stop Trench IGBT Featuring 75 Amp 650 Volt Rating and Low Saturation Voltage

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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