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650 volt 60 amp field stop igbt semiconductor device onsemi FGA60N65SMD suitable for photovoltaic inverters
650 volt 60 amp field stop igbt semiconductor device onsemi FGA60N65SMD suitable for photovoltaic inverters
Specifications
Td(off) :
104ns
Td(on) :
18ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
85pF
Input Capacitance(Cies) :
2.915nF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
6V@250uA
Gate Charge(Qg) :
189nC@15V
Pulsed Current- Forward(Ifm) :
180A
Output Capacitance(Coes) :
270pF
Reverse Recovery Time(trr) :
47ns
Switching Energy(Eoff) :
450uJ
Turn-On Energy (Eon) :
1.54mJ
Description :
650V FS (Field Stop) TO-3PN Single IGBTs RoHS
Mfr. Part # :
FGA60N65SMD
Model Number :
FGA60N65SMD
Package :
TO-3PN
Description

Product Overview

The FGA60N65SMD is a 650 V, 60 A Field Stop IGBT from ON Semiconductor, leveraging advanced Field Stop IGBT technology for optimal performance in applications demanding low conduction and switching losses. It offers high current capability, a positive temperature coefficient for easy paralleling, and low saturation voltage. This device is designed for demanding applications such as photovoltaic inverters, UPS, welding machines, PFC, and communication power supplies.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Certifications: RoHS compliant

Technical Specifications

Part NumberDescriptionVCES (V)VGES (V)IC @ TC=25C (A)IC @ TC=100C (A)ICM (A)PD @ TC=25C (W)TJ (C)Package
FGA60N65SMD650 V, 60 A Field Stop IGBT650±2012060180600-55 to +175TO-3PN
SymbolParameterTest ConditionsMinTypMaxUnit
IGBT Electrical Characteristics
BVCESCollector-Emitter Breakdown VoltageVGE = 0 V, IC = 250 μA650V
ICESCollector Cut-off CurrentVCE = VCES, VGE = 0 V250μA
IGESG-E Leakage CurrentVGE = VGES, VCE = 0 V±400nA
VGE(th)G-E Threshold VoltageIC = 250 μA, VCE = VGE3.54.56.0V
VCE(sat)Collector-Emitter Saturation VoltageIC = 60 A, VGE = 15 V1.92.5V
VCE(sat)Collector-Emitter Saturation VoltageIC = 60 A, VGE = 15 V, TC = 175°C2.1V
CiesInput CapacitanceVCE = 30 V, VGE = 0 V, f = 1 MHz2915pF
CoesOutput CapacitanceVCE = 30 V, VGE = 0 V, f = 1 MHz270pF
CresReverse Transfer CapacitanceVCE = 30 V, VGE = 0 V, f = 1 MHz85pF
td(on)Turn-on Delay TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C1827ns
trRise TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C4770ns
td(off)Turn-off Delay TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C104146ns
tfFall TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C5068ns
EonTurn-on Switching LossVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C1.542.31mJ
EoffTurn-off Switching LossVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C0.450.60mJ
EtsTotal Switching LossVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 25°C1.992.91mJ
td(on)Turn-on Delay TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C18ns
trRise TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C41ns
td(off)Turn-off Delay TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C115ns
tfFall TimeVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C48ns
EonTurn-on Switching LossVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C2.08mJ
EoffTurn-off Switching LossVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C0.78mJ
EtsTotal Switching LossVCC = 400 V, IC = 60 A, RG = 3 Ω, VGE = 15 V, Inductive Load, TC = 175°C2.86mJ
QgTotal Gate ChargeVCE = 400 V, IC = 60 A, VGE = 15 V189284nC
QgeGate-Emitter ChargeVCE = 400 V, IC = 60 A, VGE = 15 V2030nC
QgcGate-Collector ChargeVCE = 400 V, IC = 60 A, VGE = 15 V91137nC
Diode Electrical Characteristics
VFMDiode Forward VoltageIF = 30 A, TC = 25°C2.12.6V
VFMDiode Forward VoltageIF = 30 A, TC = 175°C1.7V
ErecReverse Recovery EnergyIF =30 A, dIF/dt = 200 A/μs, TC = 175°C127μJ
trrDiode Reverse Recovery TimeIF =30 A, dIF/dt = 100 A/μs, TC = 25°C47ns
trrDiode Reverse Recovery TimeIF =30 A, dIF/dt = 200 A/μs, TC = 175°C212ns
QrrDiode Reverse Recovery ChargeIF =30 A, dIF/dt = 100 A/μs, TC = 25°C87nC
QrrDiode Reverse Recovery ChargeIF =30 A, dIF/dt = 200 A/μs, TC = 175°C933nC
Thermal Characteristics
RθJC(IGBT)Junction-to-Case Thermal Resistance0.25°C/W
RθJC(Diode)Junction-to-Case Thermal Resistance1.1°C/W
RθJAJunction-to-Ambient Thermal Resistance40°C/W

2410121542_onsemi-FGA60N65SMD_C444004.pdf

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650 volt 60 amp field stop igbt semiconductor device onsemi FGA60N65SMD suitable for photovoltaic inverters

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Product Detail
Td(off) :
104ns
Td(on) :
18ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
85pF
Input Capacitance(Cies) :
2.915nF
IGBT Type :
FS (Field Stop)
Contact Supplier
650 volt 60 amp field stop igbt semiconductor device onsemi FGA60N65SMD suitable for photovoltaic inverters

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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