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Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR
Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR
Specifications
Pd - Power Dissipation :
833W
Td(off) :
290ns
Td(on) :
48ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Input Capacitance(Cies) :
7.128nF@600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.9V@60mA
Gate Charge(Qg) :
256nC
Operating Temperature :
-55℃~+175℃
Reverse Recovery Time(trr) :
183ns
Switching Energy(Eoff) :
1.8mJ
Turn-On Energy (Eon) :
1.9mJ
Description :
IGBT 1.2kV 120A 833W Through Hole TO-247
Mfr. Part # :
FGHL60T120RWD
Model Number :
FGHL60T120RWD
Package :
TO-247
Description

Product Overview

The FGHL60T120RWD is an N-Channel, Field Stop VII (FS7) IGBT with an integrated SCR in a TO247-3L package. Utilizing novel field stop 7th generation IGBT technology and Gen7 Diode, it offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation. It is suitable for applications such as motor control, UPS, data center, and high-power switching.

Product Attributes

  • Brand: onsemi
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-to-Emitter VoltageVCES1200V
Gate-to-Emitter VoltageVGES±20V
Transient Gate-to-Emitter Voltage±30V
Collector CurrentIC120ATC = 25°C (Note 1)
Collector CurrentIC60ATC = 100°C
Power DissipationPD833WTC = 25°C
Power DissipationPD416WTC = 100°C
Pulsed Collector CurrentICM180ATC = 25°C, tp = 10 µs (Note 2)
Diode Forward CurrentIF120ATC = 25°C (Note 1)
Diode Forward CurrentIF60ATC = 100°C
Pulsed Diode Maximum Forward CurrentIFM180ATC = 25°C, tp = 10 µs
Short Circuit Withstand TimeTSC5µsVGE = 15 V, VCC = 600 V, TC = 150°C
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175°C
Lead Temperature for Soldering PurposesTL260°C
Collector-to-Emitter Breakdown VoltageBVCES1200VVGE = 0 V, IC = 5 mA
Collector-to-Emitter Breakdown Voltage Temperature Coefficient1225mV/°C
Zero Gate Voltage Collector CurrentICES40µAVGE = 0 V, VCE = VCES
Gate-to-Emitter Leakage CurrentIGES±400nAVGE = 20 V, VCE = 0 V
Gate Threshold VoltageVGE(th)4.9 - 6.7VVGE = VCE, IC = 60 mA, TJ = 25°C
Collector-to-Emitter Saturation VoltageVCE(sat)1.2 - 1.8VVGE = 15 V, IC = 60 A, TJ = 25°C
Collector-to-Emitter Saturation VoltageVCE(sat)1.81VVGE = 15 V, IC = 60 A, TJ = 175°C
Input CapacitanceCies7128pFVCE = 30 V, VGE = 0 V, f = 1 MHz
Output CapacitanceCoes252pFVCE = 30 V, VGE = 0 V, f = 1 MHz
Reverse Transfer CapacitanceCres25.3pFVCE = 30 V, VGE = 0 V, f = 1 MHz
Total Gate ChargeQg256nCVCE = 600 V, VGE = 15 V, IC = 60 A
Gate-to-Emitter ChargeQge64.1nCVCE = 600 V, VGE = 15 V, IC = 60 A
Gate-to-Collector ChargeQgc102nCVCE = 600 V, VGE = 15 V, IC = 60 A
Turn-on Delay Timetd(on)48nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Turn-off Delay Timetd(off)290nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Rise Timetr30nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Fall Timetf138nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Turn-on Switching LossEon1.9mJVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Turn-off Switching LossEoff1.8mJVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Total Switching LossEts3.7mJVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 25°C
Turn-on Delay Timetd(on)51nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Turn-off Delay Timetd(off)250nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Rise Timetr64nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Fall Timetf139nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Turn-on Switching LossEon4.5mJVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Turn-off Switching LossEoff3.4mJVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Total Switching LossEts8.0mJVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 25°C
Turn-on Delay Timetd(on)45nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Turn-off Delay Timetd(off)328nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Rise Timetr35nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Fall Timetf228nsVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Turn-on Switching LossEon3.3mJVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Turn-off Switching LossEoff2.4mJVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Total Switching LossEts5.7mJVCE = 600 V, VGE = 0/15 V, IC = 30 A, RG = 4.7 Ω, TJ = 175°C
Turn-on Delay Timetd(on)52nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Turn-off Delay Timetd(off)296nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Rise Timetr68nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Fall Timetf224nsVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Turn-on Switching LossEon6.9mJVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Turn-off Switching LossEoff5.1mJVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Total Switching LossEts12.0mJVCE = 600 V, VGE = 0/15 V, IC = 60 A, RG = 4.7 Ω, TJ = 175°C
Forward VoltageVF1.46 - 2.08VIF = 60 A, TJ = 25°C
Forward VoltageVF1.7VIF = 60 A, TJ = 175°C
Reverse Recovery Timetrr183nsVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C
Reverse Recovery ChargeQrr1815nCVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C
Reverse Recovery EnergyEREc0.5mJVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C
Peak Reverse Recovery CurrentIRRM19.9AVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 25°C
Reverse Recovery Timetrr257nsVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C
Reverse Recovery ChargeQrr2651nCVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C
Reverse Recovery EnergyEREc0.9mJVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C
Peak Reverse Recovery CurrentIRRM20.6AVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 25°C
Reverse Recovery Timetrr279nsVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C
Reverse Recovery ChargeQrr4008nCVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C
Reverse Recovery EnergyEREc1.4mJVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C
Peak Reverse Recovery CurrentIRRM28.7AVR = 600 V, IF = 30 A, dIF/dt = 500 A/µs, TJ = 175°C
Reverse Recovery Timetrr420nsVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C
Reverse Recovery ChargeQrr6392nCVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C
Reverse Recovery EnergyEREc2.5mJVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C
Peak Reverse Recovery CurrentIRRM30.3AVR = 600 V, IF = 60 A, dIF/dt = 500 A/µs, TJ = 175°C
Thermal Resistance, Junction-to-Case for IGBTR JC0.18°C/W
Thermal Resistance, Junction-to-Case for DiodeR JCD0.33°C/W
Thermal Resistance, Junction-to-AmbientR JA40°C/W

2504211431_onsemi-FGHL60T120RWD_C22969010.pdf

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Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR

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Product Detail
Pd - Power Dissipation :
833W
Td(off) :
290ns
Td(on) :
48ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Input Capacitance(Cies) :
7.128nF@600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.9V@60mA
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Power Dissipation Optimized N Channel IGBT onsemi FGHL60T120RWD with Field Stop VII and Integrated SCR

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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