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RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode
RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode
Specifications
Pd - Power Dissipation :
250W
Td(off) :
125ns
Td(on) :
38ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
34pF
Input Capacitance(Cies) :
1.75nF
Gate Charge(Qg) :
80nC@15V
Pulsed Current- Forward(Ifm) :
100A
Output Capacitance(Coes) :
69pF
Reverse Recovery Time(trr) :
250ns
Switching Energy(Eoff) :
1.2mJ
Turn-On Energy (Eon) :
1.3mJ
Description :
250W 650V TO-247AC-3 Single IGBTs RoHS
Mfr. Part # :
RJH65T14DPQ-A0#T0
Model Number :
RJH65T14DPQ-A0#T0
Package :
TO-247AC-3
Description

RJH65T14DPQ-A0 650V - 50A - IGBT

The RJH65T14DPQ-A0 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) optimized for current resonance applications such as induction heating and microwave ovens. It features a low collector-to-emitter saturation voltage (VCE(sat)) of 1.45V typ., a built-in fast recovery diode, and utilizes trench gate and thin wafer technology for enhanced performance.

Product Attributes

  • Brand: Renesas
  • Package Code: PRSS0003ZH-A (TO-247A)

Technical Specifications

Item Symbol Ratings Unit Test Conditions
Absolute Maximum Ratings
Collector to emitter voltage VCES 650 V
Gate to emitter voltage VGES ±30 V
Collector current IC Note1 100 A Tc = 25 °C
50 A Tc = 100 °C
Collector peak current iC(peak) Note1 180 A
Collector to emitter diode Forward current IDF 40 A Tc = 25 °C
20 A Tc = 100 °C
Collector to emitter diode forward peak current iDF(peak) Note2 100 A
Collector dissipation PC 250 W
Junction to case thermal impedance (IGBT) θj-c Note3 0.6 °C/W
Junction to case thermal impedance (Diode) θj-cd Note3 1.33 °C/W
Junction temperature Tj Note4 175 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics
Zero gate voltage collector current ICES – 100 μA VCE = 650 V, VGE = 0 V
Gate to emitter leak current IGES – ±1 μA VGE = ±30 V, VCE = 0 V
Gate to emitter cutoff voltage VGE(off) 4 – 7 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) – 1.45 1.75 V IC = 50 A, VGE = 15 V Note5
Input capacitance Cies — 1750 — pF VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance Coes — 69 — pF
Reveres transfer capacitance Cres — 34 — pF
Total gate charge Qg — 80 — nC VGE = 15 V, VCE = 300 V, IC = 50 A
Gate to emitter charge Qge — 15 — nC
Gate to collector charge Qgc — 35 — nC
Switching Characteristics (Tc = 25 °C)
Turn-on delay time td(on) — 38 — ns VCC = 400 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Inductive load
Rise time tr — 30 — ns
Turn-off delay time td(off) — 125 — ns
Fall time tf — 115 — ns
Turn-on loss energy Eon — 1.3 — mJ
Turn-off loss energy Eoff — 1.2 — mJ
Total switching energy Etotal — 2.5 — mJ
Switching Characteristics (Tc = 150 °C)
Turn-on delay time td(on) — 38 — ns VCC = 400 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Inductive load
Rise time tr — 30 — ns
Turn-off delay time td(off) — 130 — ns
Fall time tf — 135 — ns
Turn-on loss energy Eon — 1.45 — mJ
Turn-off loss energy Eoff — 1.45 — mJ
Total switching energy Etotal — 2.90 — mJ
Tail loss Etail — 560 — μJ VCC = 300 V, VGE = 20 V, IC = 50 A, Rg = 15 Ω, Tc = 125 °C
C-E Diode Characteristics
C-E diode forward voltage VECF — 1.2 1.6 V IF = 20 A Note5
C-E diode reverse recovery time trr — 250 — ns IF = 20 A, diF/dt = –300 A/μs

2205111530_RENESAS-RJH65T14DPQ-A0-T0_C3014313.pdf

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RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode

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Product Detail
Pd - Power Dissipation :
250W
Td(off) :
125ns
Td(on) :
38ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
34pF
Input Capacitance(Cies) :
1.75nF
Contact Supplier
RENESAS RJH65T14DPQ-A0 T0 650V 50A IGBT with trench gate technology and built in fast recovery diode

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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