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High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance
High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance
Specifications
Td(off) :
4.8us
Pd - Power Dissipation :
150W
Td(on) :
700ns
Collector-Emitter Breakdown Voltage (Vces) :
400V
Input Capacitance(Cies) :
-
IGBT Type :
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
1.3V@1mA
Gate Charge(Qg) :
17nC@12V
Operating Temperature :
-55℃~+175℃
Reverse Recovery Time(trr) :
-
Turn-On Energy (Eon) :
-
Description :
IGBT 400V 21A 150W Surface Mount DPAK(TO-252)
Mfr. Part # :
ISL9V3040D3ST-F085C
Model Number :
ISL9V3040D3ST-F085C
Package :
DPAK(TO-252)
Description

Product Overview

The ISL9V3040x3ST-F085C is an EcoSPARK Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high energy capability of 300 mJ, a 400 V breakdown voltage, and a logic-level gate drive. This device is AEC-Q101 qualified and PPAP capable, making it suitable for high-current ignition systems and coil-on-plug applications. It is Pb-Free and RoHS Compliant.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: AEC-Q101 Qualified, PPAP Capable
  • Compliance: Pb-Free, RoHS Compliant

Technical Specifications

ModelParameterValueUnit
ISL9V3040x3ST-F085CCollector to Emitter Breakdown Voltage (BVCER)400V
Emitter to Collector Voltage (BVECS) - Reverse Battery24V
SCIS Energy (ESCIS25) at TJ = 25C300mJ
SCIS Energy (ESCIS150) at TJ = 150C170mJ
Collector Current Continuous (IC25) at VGE = 4.0 V, TC = 25C21A
Collector Current Continuous (IC110) at VGE = 4.0 V, TC = 110C17A
Gate to Emitter Voltage Continuous (VGEM)±10V
Power Dissipation Total (PD) at TC = 25C150W
Operating Junction and Storage Temperature (TJ, TSTG)-55 to +175°C
Lead Temperature for Soldering (TL)300°C
Reflow Soldering (TPKG)260°C
ESD HBM4kV
ISL9V3040D3ST-F085CPackageDPAK (Pb-Free)
Shipping2500 Units/Tape & Reel
ISL9V3040S3ST-F085CPackageD2PAK (Pb-Free)
Shipping800 Units/Tape & Reel

2411271824_onsemi-ISL9V3040D3ST-F085C_C603080.pdf

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High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance

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Product Detail
Td(off) :
4.8us
Pd - Power Dissipation :
150W
Td(on) :
700ns
Collector-Emitter Breakdown Voltage (Vces) :
400V
Input Capacitance(Cies) :
-
IGBT Type :
-
Contact Supplier
High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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