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Industrial motor drive power module onsemi NXH25C120L2C2SG with six 25 amp 1600 volt rectifiers and brake IGBT included
Industrial motor drive power module onsemi NXH25C120L2C2SG with six 25 amp 1600 volt rectifiers and brake IGBT included
Specifications
Td(off) :
235ns
Td(on) :
68ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
117pF
Input Capacitance(Cies) :
6.2nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.8V@3.04mA
Operating Temperature :
-40℃~+150℃
Pulsed Current- Forward(Ifm) :
370A
Switching Energy(Eoff) :
720uJ
Turn-On Energy (Eon) :
2.2mJ
Description :
1.2kV DIP-26 Single IGBTs RoHS
Mfr. Part # :
NXH25C120L2C2SG
Model Number :
NXH25C120L2C2SG
Package :
DIP-26
Description

Product Overview

The NXH25C120L2C2SG is a transfer-molded power module featuring a converter-inverter-brake circuit. It integrates six 25 A, 1600 V rectifiers, six 25 A, 1200 V IGBTs with inverse diodes, one 25 A, 1200 V brake IGBT with brake diode, and an NTC thermistor. Key advantages include low thermal resistance and a compact package with solderable pins. This module is suitable for industrial motor drives and servo drives.

Product Attributes

  • Brand: onsemi (Semiconductor Components Industries, LLC)
  • Certifications: PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

ParameterSymbolValueUnitNotes
IGBT CHARACTERISTICS
IGBT CollectorEmitter VoltageVCES1200V
GateEmitter VoltageVGE20V
Continuous Collector Current @ TC = 80CIC25A(TvJmax = 175C)
Pulsed Collector CurrentICpulse75A
CollectorEmitter Cutoff CurrentICES250AVGE = 0 V, VCE = 1200 V
CollectorEmitter Saturation Voltage @ TJ = 25CVCE(sat)1.7 - 2.4VVGE = 15 V, IC = 25 A
CollectorEmitter Saturation Voltage @ TJ = 150CVCE(sat)1.9VVGE = 15 V, IC = 25 A
GateEmitter Threshold VoltageVGE(TH)4.8 - 6.8VIC = 3.04 mA
Gate Leakage CurrentIGES400nAVGE = 20 V, VCE = 0 V
Turnon Delay Time @ TJ = 25Ctd(on)68nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Rise Time @ TJ = 25Ctr63nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turnoff Delay Time @ TJ = 25Ctd(off)235nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Fall Time @ TJ = 25Ctf48nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turnon Switching Loss per Pulse @ TJ = 25CEon2200JVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turn off Switching Loss per Pulse @ TJ = 25CEoff720JVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turnon Delay Time @ TJ = 125Ctd(on)72nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Rise Time @ TJ = 125Ctr56nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turnoff Delay Time @ TJ = 125Ctd(off)266nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Fall Time @ TJ = 125Ctf54nsVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turnon Switching Loss per Pulse @ TJ = 125CEon3050JVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Turn off Switching Loss per Pulse @ TJ = 125CEoff1200JVCE = 600 V, IC = 25 A, VGE = 15 V, RG = 20
Input CapacitanceCies6200pFVCE = 20 V. VGE = 0 V f = 100 kHz
Output CapacitanceCoes212pFVCE = 20 V. VGE = 0 V f = 100 kHz
Reverse Transfer CapacitanceCres117pFVCE = 20 V. VGE = 0 V f = 100 kHz
Total Gate ChargeQg269nCVCE = 600 V, IC = 25 A, VGE = 0 V ~ +15 V
Temperature under switching conditionsTvj op40 - 150C
Thermal Resistance chiptocaseRthJC0.54C/W
DIODE CHARACTERISTICS (Brake Diode)
Brake Diode Reverse Leakage CurrentIR200AVR = 1200 V
Diode Forward Voltage @ TJ = 25CVF1.9 - 2.6VIF = 25 A
Diode Forward Voltage @ TJ = 150CVF1.7VIF = 25 A
Temperature under switching conditionsTvj op40 - 150C
Thermal Resistance chiptocaseRthJC1.10C/W
RECTIFIER DIODE CHARACTERISTICS
Rectifier Peak Repetitive Reverse VoltageVRRM1600V
Continuous Forward Current @ TC = 80CIF25A(TvJmax = 150C)
Repetitive Peak Forward CurrentIFRM75A
I2t value @ 25CI2t680A2t(10 ms single halfsine wave)
I2t value @ 150CI2t360A2t(10 ms single halfsine wave)
Surge current @ 25CIFSM370A(10 ms sin180)
Rectifier Reverse Leakage CurrentIR200AVR = 1600 V
Rectifier Forward Voltage @ TJ = 25CVF1 - 1.5VIF = 25 A
Rectifier Forward Voltage @ TJ = 150CVF1.1VIF = 35 A
Temperature under switching conditionsTvj op40 - 150C
Thermal Resistance chiptocaseRthJC0.86C/W
THERMAL PROPERTIES
Storage Temperature rangeTstg40 to 125C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 50 HzVis3000VRMS
Creepage distance6.0mm
Clearance distance6.0mm
Comperative Tracking IndexCTI> 400

2410121953_onsemi-NXH25C120L2C2SG_C906528.pdf

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Industrial motor drive power module onsemi NXH25C120L2C2SG with six 25 amp 1600 volt rectifiers and brake IGBT included

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Product Detail
Td(off) :
235ns
Td(on) :
68ns
Collector-Emitter Breakdown Voltage (Vces) :
1.2kV
Reverse Transfer Capacitance (Cres) :
117pF
Input Capacitance(Cies) :
6.2nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.8V@3.04mA
Contact Supplier
Industrial motor drive power module onsemi NXH25C120L2C2SG with six 25 amp 1600 volt rectifiers and brake IGBT included

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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