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Soft Switching IGBT SPTECH SPT25N135F1A Featuring Low Switching Losses and High Avalanche Ruggedness
Soft Switching IGBT SPTECH SPT25N135F1A Featuring Low Switching Losses and High Avalanche Ruggedness
Specifications
Td(off) :
180ns
Operating Temperature :
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) :
1.35kV
Reverse Transfer Capacitance (Cres) :
50pF
Input Capacitance(Cies) :
2.5nF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
5.1V@250uA
Gate Charge(Qg) :
125nC@15V
Output Capacitance(Coes) :
70pF
Reverse Recovery Time(trr) :
460ns
Switching Energy(Eoff) :
320uJ
Description :
IGBT FS (Field Stop) 1.35kV 50A Through Hole TO-247-3
Mfr. Part # :
SPT25N135F1A
Model Number :
SPT25N135F1A
Package :
TO-247-3
Description

Product Overview

The SPT25N135F1A is a Field Stop Trench IGBT from SPTECH, offering low switching losses, high energy efficiency, and high avalanche ruggedness. It is designed for soft switching applications, featuring a high breakdown voltage of 1350V for enhanced reliability. Its Trench-Stop Technology provides high-speed switching, temperature-stable ruggedness, low VCEsat, and easy parallel switching capability. Applications include inductive cooking, inverterized microwave ovens, resonant converters, and other soft switching scenarios.

Product Attributes

  • Brand: SPTECH
  • Product Series: SPT25N135F1A

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
IGBT Characteristics
Collector-Emitter Breakdown VoltageBVCESVGE=0V , IC=1mA13501450-V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=250A5.15.86.4V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=25A, Tj = 25C-2.0-V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=25A, Tj = 150C-2.52.5V
Zero Gate Voltage Collector CurrentICESVCE = 1350V, VGE = 0V, Tj = 25C-<1-A
Zero Gate Voltage Collector CurrentICESVCE = 1350V, VGE = 0V, Tj = 150C-1001000A
Gate-Emitter Leakage CurrentIGESVCE = 0V, VGE = 20V--100nA
Input CapacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-2500-pF
Output CapacitanceCoes--70-pF
Reverse Transfer CapacitanceCres--50-pF
Gate ChargeQGVCC = 600V, IC = 25A, VGE = 15V-125-nC
Switching Characteristics (Inductive Load, Rg=10, VCC=600V, IC=25A, VGE=15V)
Turn-off Delay Time (Tj=25C)td(off)Tj = 25C-180-ns
Fall Time (Tj=25C)tfTj = 25C-40-ns
Turn-off Energy (Tj=25C)EoffTj = 25C-0.32-mJ
Turn-off Delay Time (Tj=150C)td(off)Tj = 150C-220-ns
Fall Time (Tj=150C)tfTj = 150C-90-ns
Turn-off Energy (Tj=150C)EoffTj = 150C-0.65-mJ
Diode Characteristics
Diode Forward VoltageVFMIF = 25A-2.3-V
Reverse Recovery TimeTrrIF= 25A, di/dt= 200A/s-460-ns
Reverse Recovery CurrentIrr--17-A
Reverse Recovery ChargeQrr--3600-nC
Maximum Ratings
Collector-Emitter Breakdown VoltageVCE--1350-V
DC Collector Current (TC=25C)ICTC = 25C-50-A
DC Collector Current (TC=100C)ICTC = 100C-25-A
Diode Forward Current (TC=25C)IFTC = 25C-50-A
Diode Forward Current (TC=100C)IFTC = 100C-25-A
Pulsed Collector CurrentICpulstp limited by Tjmax-75-A
Operating Junction TemperatureTj--40-150C
Storage TemperatureTs--55-150C
Thermal Resistance
IGBT Thermal Resistance (Junction-Case)R(j-c)--0.48-K/W
Diode Thermal Resistance (Junction-Case)R(j-c)--1.2-K/W
Thermal Resistance (Junction-Ambient)R(j-a)--40-K/W

2505231205_SPTECH-SPT25N135F1A_C480181.pdf

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Soft Switching IGBT SPTECH SPT25N135F1A Featuring Low Switching Losses and High Avalanche Ruggedness

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Product Detail
Td(off) :
180ns
Operating Temperature :
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) :
1.35kV
Reverse Transfer Capacitance (Cres) :
50pF
Input Capacitance(Cies) :
2.5nF
IGBT Type :
FS (Field Stop)
Contact Supplier
Soft Switching IGBT SPTECH SPT25N135F1A Featuring Low Switching Losses and High Avalanche Ruggedness

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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