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650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems
650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems
Specifications
Td(off) :
21ns
Pd - Power Dissipation :
275W
Td(on) :
33ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
0.1nF
Input Capacitance(Cies) :
5.46nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4.2V@500uA
Operating Temperature :
-40℃~+175℃
Reverse Recovery Time(trr) :
133ns
Switching Energy(Eoff) :
600uJ
Turn-On Energy (Eon) :
2.37mJ
Description :
275W 650V TO-247 Single IGBTs RoHS
Mfr. Part # :
MIQ50T065DFS
Model Number :
MIQ50T065DFS
Package :
TO-247
Description

Product Overview

The MIQ50T065DFS is a Silicon Trench FS IGBT from Miracle Technology Co., Ltd. featuring low switching losses, a positive temperature coefficient, and a 650V Trench Gate/Field Stop Process. It is designed for applications such as inverters, charging piles, on-board chargers, and uninterrupted power supplies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Material: Silicon
  • Technology: Trench Gate/Field Stop Process

Technical Specifications

TypeVCES (V)IC (A)VCE(sat) @ Tvj=25C (V)Tvj max (C)Package
MIQ50T065DFS650501.58175TO-247
SymbolParameterTest ConditionMin.Typ.Max.Unit
VCESCollector-emitter voltageTvj = 25C--650V
ICDC collector currentlimited by Tvj max, TC = 25C--100A
ICDC collector currentlimited by Tvj max, TC = 100C--50A
IFDiode forward currentlimited by Tvj max, TC = 25C--100A
IFDiode forward currentlimited by Tvj max, TC = 100C--50A
VGEGate-emitter voltage---20V
VGEGate-emitter transient voltage---30V
PtotPower dissipationTC = 25C--275W
Tvj(OP)Operating junction temperature--40-175C
tSCShort circuit withstand timeVGE = 15.0V, VCE = 400V---s
RJCIGBT thermal resistance, junction - case---0.38K/W
RJCDiode thermal resistance, junction - case---0.45K/W
V(BR)CESCollector-emitter breakdown voltageVGE = 0V,IC = 250A650--V
VCEsatCollector-emitter saturation voltageVGE = 15V,IC = 50A, Tvj = 25C-1.582.1V
VCEsatCollector-emitter saturation voltageVGE = 15V,IC = 50A, Tvj = 125C-1.87-V
VCEsatCollector-emitter saturation voltageVGE = 15V,IC = 50A, Tvj = 150C-1.95-V
VFDiode forward voltageVGE = 0V,IC = 50A, Tvj = 25C-1.632.1V
VFDiode forward voltageVGE = 0V,IC = 50A, Tvj = 125C-1.42-V
VFDiode forward voltageVGE = 0V,IC = 50A, Tvj=150C-1.37-V
VGE(th)Gate-emitter threshold voltageVCE = VGE,IC = 500A4.25.05.8V
ICESZero gate voltage collector currentVCE = 650V,VGE = 0V--1mA
IGESGate-emitter leakage currentVCE = 0V,VGE = 20V--200nA
gfsTransconductanceVCE = 20V,IC = 50A-77-S
CiesInput capacitanceVCE = 25V, VGE = 0V, F = 1MHZ-5.46-nF
CresReverse transfer capacitance--0.1-nF
QGGate chargeVGE = -15+15V-0.5-C
td(on)Turn-On Delay TimeVCE = 400V, IC = 50A, VGE = 15V, Rg = 8-33-ns
trTurn-On Rise Time--75-ns
td(off)Turn-Off Delay Time--21-ns
tfTurn-Off Fall Time--41-ns
EonTurn-on energy--2.37-mJ
EoffTurn-off energy--0.60-mJ
trrDiode reverse recovery timeIF = 50A, VR = 400V, VGE = -15V, di/dt = 411A/s-133-ns
QrrDiode reverse recovery charge--1.48-C

2408011701_MIRACLE-POWER-MIQ50T065DFS_C34373737.pdf

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650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems

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Product Detail
Td(off) :
21ns
Pd - Power Dissipation :
275W
Td(on) :
33ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
0.1nF
Input Capacitance(Cies) :
5.46nF
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650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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