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Switching Silicon Trench FS IGBT MIRACLE POWER MIQ75T065DFS for Energy Storage and Inductive Heating
Switching Silicon Trench FS IGBT MIRACLE POWER MIQ75T065DFS for Energy Storage and Inductive Heating
Specifications
Td(off) :
82ns
Pd - Power Dissipation :
520W
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4V@250uA
Gate Charge(Qg) :
273nC@15V
Operating Temperature :
-40℃~+150℃
Reverse Recovery Time(trr) :
156ns
Switching Energy(Eoff) :
1.03mJ
Turn-On Energy (Eon) :
2.86mJ
Input Capacitance(Cies) :
4.472nF
Pulsed Current- Forward(Ifm) :
300A
Output Capacitance(Coes) :
171pF
Description :
520W 650V TO-247 Single IGBTs RoHS
Mfr. Part # :
MIQ75T065DFS
Model Number :
MIQ75T065DFS
Package :
TO-247
Description

Product Overview

The MIQ75T065DFS is a Silicon Trench FS IGBT from Miracle Technology Co., Ltd. It offers low VCE(sat), fast switching, and high ruggedness, making it suitable for demanding applications. This IGBT is short-circuit rated and designed for use in solar inverters, energy storage systems, industrial inductive heating, and uninterrupted power supplies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Material: Silicon Trench FS IGBT
  • Origin: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

TypeVCE (V)IC (A)VCE(sat) @ Tvj = 25C (V)Tvj max (C)PackagePtot @ TC = 25C (W)Ptot @ TC = 100C (W)Tvj(OP) (C)Tstg (C)RJC IGBT (C/W)RJC Diode (C/W)RJA (C/W)V(BR)CES (V)VCEsat @ Tvj = 25C (V)VCEsat @ Tvj = 150C (V)VF @ Tvj = 25C (V)VF @ Tvj = 150C (V)VGE(th) (V)ICES @ Tvj = 25C (mA)ICES @ Tvj = 150C (mA)IGES (nA)gfs (S)Cies (pF)Coes (pF)Cres (pF)QG (nC)td(on) (ns)tr (ns)td(off) (ns)tf (ns)Eon (mJ)Eoff (mJ)Ets (mJ)trr (ns)Qrr (C)Irrm (A)
MIQ75T065DFS650751.56175TO-247520260-40...+150-40...+1500.290.35406501.561.901.551.904.0-5.01TBC200584472171202732513082572.861.03TBC1561.2816

2408011701_MIRACLE-POWER-MIQ75T065DFS_C34373738.pdf

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Switching Silicon Trench FS IGBT MIRACLE POWER MIQ75T065DFS for Energy Storage and Inductive Heating

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Product Detail
Td(off) :
82ns
Pd - Power Dissipation :
520W
Td(on) :
25ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
20pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4V@250uA
Contact Supplier
Switching Silicon Trench FS IGBT MIRACLE POWER MIQ75T065DFS for Energy Storage and Inductive Heating

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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