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Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems
Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems
Specifications
Td(off) :
80ns
Pd - Power Dissipation :
455W
Td(on) :
28ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
43pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
4V@75mA
Gate Charge(Qg) :
123nC
Operating Temperature :
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr) :
43.4ns
Switching Energy(Eoff) :
720uJ
Turn-On Energy (Eon) :
2.4mJ
Input Capacitance(Cies) :
3.68nF
Pulsed Current- Forward(Ifm) :
225A
Output Capacitance(Coes) :
179pF
Description :
IGBT FS (Field Stop) 650V 150A 455W Through Hole TO-247-G03
Mfr. Part # :
FGH75T65SHD-F155
Model Number :
FGH75T65SHD-F155
Package :
TO-247-G03
Description

Product Overview

The FGH75T65SHD is a 650 V, 75 A Field Stop Trench IGBT from ON Semiconductor, leveraging novel field stop IGBT technology for optimal performance in demanding applications. It offers a positive temperature coefficient for easy parallel operation, high current capability, and low saturation voltage. This IGBT is designed for applications requiring low conduction and switching losses, including solar inverters, UPS, welders, telecom, ESS, and PFC systems.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Certifications: RoHS Compliant

Technical Specifications

Part NumberDescriptionAbsolute Maximum RatingsThermal CharacteristicsElectrical Characteristics (IGBT)Electrical Characteristics (Diode)
FGH75T65SHD650 V, 75 A Field Stop Trench IGBTVCES: 650 V, VGES: 20 V, IC (TC=25C): 150 A, IC (TC=100C): 75 A, PD (TC=25C): 455 W, TJ: -55 to +175 CRJC(IGBT): 0.33 C/W, RJC(Diode): 0.65 C/W, RJA: 40 C/WBVCES: 650 V, ICES: 250 A, IGES: 400 nA, VGE(th): 4.0 - 7.5 V, VCE(sat) (IC=75 A, VGE=15 V): 1.6 V (Typ.)VFM (IF=50 A, TC=25C): 2.2 V (Typ.)
Features:Cies: 3680 pF (Typ.), Coes: 179 pF (Typ.), Cres: 43 pF (Typ.)Erec (IF=50 A, dIF/dt=200 A/s, TC=175C): 60 uJ (Typ.)
trr (TC=25C): 43.4 ns (Typ.)
Qrr (TC=25C): 87.9 nC (Typ.)

2410121806_onsemi-FGH75T65SHD-F155_C511966.pdf

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Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems

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Product Detail
Td(off) :
80ns
Pd - Power Dissipation :
455W
Td(on) :
28ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
43pF
IGBT Type :
FS (Field Stop)
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Field Stop Trench IGBT onsemi FGH75T65SHD-F155 650 Volt 75 Amp suitable for UPS and ESS systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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