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Field Stop Trench IGBT onsemi FGHL50T65MQDT Suitable for Solar Inverters UPS ESS and Power Converters
Field Stop Trench IGBT onsemi FGHL50T65MQDT Suitable for Solar Inverters UPS ESS and Power Converters
Specifications
Td(off) :
90ns
Pd - Power Dissipation :
268W
Td(on) :
19ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
11pF
IGBT Type :
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) :
3V@50mA
Operating Temperature :
-55℃~+175℃
Gate Charge(Qg) :
99nC@15V
Reverse Recovery Time(trr) :
79ns
Switching Energy(Eoff) :
290uJ
Turn-On Energy (Eon) :
470uJ
Input Capacitance(Cies) :
3.335nF
Pulsed Current- Forward(Ifm) :
200A
Output Capacitance(Coes) :
105pF
Description :
268W 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS
Mfr. Part # :
FGHL50T65MQDT
Model Number :
FGHL50T65MQDT
Package :
TO-247-3L
Description

onsemi FGHL50T65MQDT Field Stop Trench IGBT

The onsemi FGHL50T65MQDT is a Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching with tight parameter distribution. Designed for easy parallel operation due to its positive temperature coefficient, this IGBT is suitable for demanding applications like solar inverters, UPS, ESS, PFC, and converters.

Product Attributes

  • Brand: onsemi
  • Technology: Field Stop Trench IGBT
  • Certifications: RoHS Compliant

Technical Specifications

Parameter Symbol Value Unit Test Conditions
Collector to Emitter Voltage VCES 650 V
Gate to Emitter Voltage (Transient) VGES ±30 V
Collector Current (@ TC = 25°C) IC 80 A
Collector Current (@ TC = 100°C) IC 50 A
Pulsed Collector Current ILM 200 A (Note 2)
Diode Forward Current (@ TC = 25°C) IF 60 A
Diode Forward Current (@ TC = 100°C) IF 50 A
Maximum Power Dissipation (@ TC = 25°C) PD 268 W
Maximum Power Dissipation (@ TC = 100°C) PD 134 W
Operating Junction and Storage Temperature Range TJ, TSTG -55 to +175 °C
Collector to Emitter Saturation Voltage (Typ.) VCE(sat) 1.45 V IC = 50 A, TJ = 25°C
Input Capacitance (Typ.) Cies 3335 pF VCE = 30 V, VGE = 0 V, f = 1 MHz
Total Gate Charge (Typ.) Qg 99 nC VCE = 400 V, IC = 50 A, VGE = 15 V
Turn-on Delay Time (Typ.) td(on) 19 ns VCC = 400 V, IC = 25 A, RG = 6 Ω, VGE = 15 V, TJ = 25°C
Turn-off Delay Time (Typ.) td(off) 96 ns VCC = 400 V, IC = 25 A, RG = 6 Ω, VGE = 15 V, TJ = 25°C
Diode Forward Voltage (Typ.) VF 1.65 V IF = 50 A, TJ = 25°C
Diode Reverse Recovery Energy (Typ.) Erec 65 µJ VCE = 400 V, IF = 25 A, diF/dt = 1000 A/µs, TJ = 25°C
Diode Reverse Recovery Time (Typ.) Trr 44 ns VCE = 400 V, IF = 25 A, diF/dt = 1000 A/µs, TJ = 25°C

2410121849_onsemi-FGHL50T65MQDT_C5209101.pdf

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Field Stop Trench IGBT onsemi FGHL50T65MQDT Suitable for Solar Inverters UPS ESS and Power Converters

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Product Detail
Td(off) :
90ns
Pd - Power Dissipation :
268W
Td(on) :
19ns
Collector-Emitter Breakdown Voltage (Vces) :
650V
Reverse Transfer Capacitance (Cres) :
11pF
IGBT Type :
FS (Field Stop)
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Field Stop Trench IGBT onsemi FGHL50T65MQDT Suitable for Solar Inverters UPS ESS and Power Converters

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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