Silicon Planar Zener Diodes with Zener voltages graded according to the international E24 standard. Other tolerances and higher Zener voltages are available upon request. These diodes are suitable for various applications requiring precise voltage regulation.
| Type | Zener Voltage Range (V) | VZT at IZT (V) | IZT (mA) | ZZT Max. () | ZZK at IZK Max. () | IZK Max. (A) | IR at VR Max. (A) | Temp. Coefficient of Zener Voltage TKvz (%/K) |
| BZX55C0V8 | 0.73...0.83 | 0.8 | 5 | 8 | 50 | 1 | - | -0.26...-0.23 |
| BZX55C2V0 | 1.8...2.15 | 2 | 5 | 85 | 600 | 1 | 100 | -0.09...-0.06 |
| BZX55C2V2 | 2.08...2.33 | 2.2 | 5 | 85 | 600 | 1 | 75 | -0.09...-0.06 |
| BZX55C2V4 | 2.28...2.56 | 2.4 | 5 | 85 | 600 | 1 | 50 | -0.09...-0.06 |
| BZX55C2V7 | 2.5...2.9 | 2.7 | 5 | 85 | 600 | 1 | 10 | -0.09...-0.06 |
| BZX55C3V0 | 2.8...3.2 | 3 | 5 | 85 | 600 | 1 | 4 | -0.08...-0.05 |
| BZX55C3V3 | 3.1...3.5 | 3.3 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V6 | 3.4...3.8 | 3.6 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V9 | 3.7...4.1 | 3.9 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C4V3 | 4...4.6 | 4.3 | 5 | 75 | 600 | 1 | 1 | -0.06...-0.03 |
| BZX55C4V7 | 4.4...5 | 4.7 | 5 | 60 | 600 | 1 | 0.5 | -0.05...+0.02 |
| BZX55C5V1 | 4.8...5.4 | 5.1 | 5 | 35 | 550 | 1 | 0.1 | -0.02...+0.02 |
| BZX55C5V6 | 5.2...6 | 5.6 | 5 | 25 | 450 | 1 | 0.1 | -0.05...+0.05 |
| BZX55C6V2 | 5.8...6.6 | 6.2 | 5 | 10 | 200 | 1 | 0.1 | 0.03...0.06 |
| BZX55C6V8 | 6.4...7.2 | 6.8 | 5 | 8 | 150 | 1 | 0.1 | 0.03...0.07 |
| BZX55C7V5 | 7...7.9 | 7.5 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.07 |
| BZX55C8V2 | 7.7...8.7 | 8.2 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.08 |
| BZX55C9V1 | 8.5...9.6 | 9.1 | 5 | 10 | 50 | 1 | 0.1 | 0.03...0.09 |
| BZX55C10 | 9.4...10.6 | 10 | 5 | 15 | 70 | 1 | 0.1 | 0.03...0.1 |
| BZX55C11 | 10.4...11.6 | 11 | 5 | 20 | 70 | 1 | 0.1 | 0.03...0.11 |
| BZX55C12 | 11.4...12.7 | 12 | 5 | 20 | 90 | 1 | 0.1 | 0.03...0.11 |
| BZX55C13 | 12.4...14.1 | 13 | 5 | 26 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C15 | 13.8...15.6 | 15 | 5 | 30 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C16 | 15.3...17.1 | 16 | 5 | 40 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C18 | 16.8...19.1 | 18 | 5 | 50 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C20 | 18.8...21.2 | 20 | 5 | 55 | 220 | 1 | 0.1 | 0.03...0.11 |
| BZX55C22 | 20.8...23.3 | 22 | 5 | 55 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C24 | 22.8...25.6 | 24 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C27 | 25.1...28.9 | 27 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C30 | 28...32 | 30 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C33 | 31...35 | 33 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C36 | 34...38 | 36 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C39 | 37...41 | 39 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C43 | 40...46 | 43 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C47 | 44...50 | 47 | 2.5 | 110 | 600 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C51 | 48...54 | 51 | 2.5 | 125 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C56 | 52...60 | 56 | 2.5 | 135 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C62 | 58...66 | 62 | 2.5 | 150 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C68 | 64...72 | 68 | 2.5 | 200 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C75 | 70...79 | 75 | 2.5 | 250 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 5001) | mW |
| Junction Temperature | Tj | 175 | C |
| Storage Temperature Range | Tstg | -55 to +175 | C |
| Parameter | Symbol | Max. | Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 0.31) | K/mW |
| Forward Voltage at IF = 100 mA | VF | 1 | V |
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
2) The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole.