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4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W
ShenZhen Mingjiada Electronics Co.,Ltd.

4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W
Model：MSCSM170HM23CT3AG
MOQ：10
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3rd Generation SiC MOSFET HXY MOSFET NTHL045N065SC1-HXY with High System Efficiency and Fast Switching
Hefei Purple Horn E-Commerce Co., Ltd.

3rd Generation SiC MOSFET HXY MOSFET NTHL045N065SC1-HXY with High System Efficiency and Fast Switching
Model：NTHL045N065SC1-HXY
Drain to Source Voltage：650V
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IXFN56N90P 900V 56A SiC MOSFET Low Rds(on) 65mΩ Fast Switching High Frequency Robust Body Diode High Temp Operation TO-264 Package
TOP Electronic Industry Co., Ltd.

IXFN56N90P 900V 56A SiC MOSFET Low Rds(on) 65mΩ Fast Switching High Frequency Robust Body Diode High Temp Operation TO-264 Package
Model：IXFN56N90P
MOQ：1
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
SHAREWAY TECHNOLOGY CO., LTD.

750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
Model：750319331
MOQ：100pcs
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SiC MOSFET and IGBT gate drive solution Broadcom ACPL-K33T-560E optocoupler with reinforced insulation
Beijing Silk Road Enterprise Management Services Co., Ltd.

SiC MOSFET and IGBT gate drive solution Broadcom ACPL-K33T-560E optocoupler with reinforced insulation
Model：ACPL-K33T-560E
Power Dissipation：550mW
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Zhuhai Cersol Technology Co, Ltd

Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
Delivery Time：USUALLY 1 MONTH
Brand Name：Cersol
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SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
SHANGHAI FAMOUS TRADE CO.,LTD

SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
Model：SiC seed wafer
MOQ：25
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6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
SHANGHAI FAMOUS TRADE CO.,LTD

6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
Model：4H Semi-insulating SiC substarte/wafer
MOQ：1
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W Shape Sic Heating Elements High Performance For Powder Metallurgy / Glass
Zhengzhou Brother Furnace Co.,Ltd

W Shape Sic Heating Elements High Performance For Powder Metallurgy / Glass
Model：BR
MOQ：1 Set
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Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor
Shenzhen Sai Collie Technology Co., Ltd.

Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor
Model：FDV301N
MOQ：1
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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Zhenan Metallurgy Co., Ltd

Black Silicon Carbide As Refractory In Ceramic Production Sic
Model：Silicon Carbide
MOQ：Negotiable
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M Type SiC Heating element
ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD

M Type SiC Heating element
Supply Ability：10-1000PCS
MOQ：10pcs
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C2M1000170 Trans MOSFET N-CH SiC 1.7KV 5A 3-Pin(3+Tab) TO-247
Angel Technology Electronics Co

C2M1000170 Trans MOSFET N-CH SiC 1.7KV 5A 3-Pin(3+Tab) TO-247
Description：C2M1000170 Trans MOSFET N-CH SiC 1.7KV 5A 3-Pin(3+Tab) TO-247
MOQ：10
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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC
Shenzhen Koben Electronics Co., Ltd.

IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC
Model：IRFP260NPBF
MOQ：10 pcs
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Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet
Anterwell Technology Ltd.

Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet
Model：IRFP240PBF
MOQ：10pcs
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200v N Channel Mosfet Transistor Surface Mount IRF640NSTRLPBF
Shenzhen Huahao Gaosheng Technology Co., Ltd

200v N Channel Mosfet Transistor Surface Mount IRF640NSTRLPBF
Model：IRF640NSTRLPBF
MOQ：Minimum Order Quantity: 10 PCS
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Performance NetEngine AR6121E Enterprise Router 1200Mbps 2.4G Wi-Fi Transmission Rate 10/100/1000Mbps Wired Transfer Rate
Beijing Hui Tong High Tech Limited.

Performance NetEngine AR6121E Enterprise Router 1200Mbps 2.4G Wi-Fi Transmission Rate 10/100/1000Mbps Wired Transfer Rate
with modem function：Yes
Price：CN¥2,303.25/pieces 1-1 pieces
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MC33GD3100EK Gate Drivers EV Inverter Control; IGBT & SiC GDIC
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

MC33GD3100EK Gate Drivers EV Inverter Control; IGBT & SiC GDIC
Model：MC33GD3100EK
MOQ：42
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#20 Mesh Green SiC for High Precision Machining and Honing Applications
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Luoyang Haocheng Abrasive Tools Co., Ltd

#20 Mesh Green SiC for High Precision Machining and Honing Applications
Model：200*100*150
Place of Origin：Henan,china
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HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace Multiple Temperature Control Zones
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Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd

HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace Multiple Temperature Control Zones
Model：Customizable
MOQ：1 set
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