1A 1000V 75nS high voltage rectifier diodes DO-41-2P ultra fast rectifier diodes
Silicon rectifier diodes features:
surface mount diode mechanical Data:
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
| UF100 | UF101 | UF102 | UF104 | UF106 | UF108 | UF1010 | Unit | |
|
Peak Reverse Voltage, Pepetitive ; VRM
|
50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
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Maximum RMS Voltage
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35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
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DC Blocking Voltage; VR
|
50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
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Average Forward Current, Io @TA=55℃ 3.8” lead length, 60Hz, resistive or inductive load
|
1.0 | A | ||||||
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Peak Forward Surge Current IFM (surge) 8.3msec. single half sine-wave superimposed on rated load (JEDEC method)
|
30.0 | A | ||||||
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Maximum Forward Voltage VF @1.0A, 25℃
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1.00 | 1.10 | 1.70 | V | ||||
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Maximum Reverse Current, @ Rated TJ=25 ℃ Reverse Voltage TJ=100 ℃
|
10.0 500 |
£g A £g A
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Typical Junction capacitance (Note 1) CJ
|
17.0 |
PF
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Typical Junction Resistance (Note 2) R £KJA
|
60.0 | ℃/W | ||||||
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Reverse Recovery Time IF=.5A, IR=1A, Irr=.25A
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50 | 75 | ns | |||||
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Operating and Storage Temperature Range
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-55 to +150
|
℃ |
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