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FGH75T65UPD
FGH75T65UPD
Specifications
Gate-Emitter Leakage Current :
400 nA
Product Category :
IGBT Transistors
Mounting Style :
Through Hole
Continuous Collector Current at 25 C :
150 A
Pd - Power Dissipation :
187 W
Collector- Emitter Voltage VCEO Max :
650 V
Package / Case :
TO-247
Maximum Operating Temperature :
+ 175 C
Maximum Gate Emitter Voltage :
20 V
Packaging :
Tube
Configuration :
Single
Collector-Emitter Saturation Voltage :
2.3 V
Manufacturer :
Fairchild Semiconductor
Description
The FGH75T65UPD,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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FGH75T65UPD

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Product Detail
Gate-Emitter Leakage Current :
400 nA
Product Category :
IGBT Transistors
Mounting Style :
Through Hole
Continuous Collector Current at 25 C :
150 A
Pd - Power Dissipation :
187 W
Collector- Emitter Voltage VCEO Max :
650 V
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FGH75T65UPD

WONDERFUL SEMICONDUCTOR（HONG KONG）CO.，LIMITED

Verified Supplier
2 Years
hongkong
Since 2015
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller, Other
Main Products :
Circuit Protection Chip, Connector IC, Electromechanical IC
Total Annual :
8000000-10000000
Employee Number :
100~200
Certification Level :
Verified Supplier
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