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Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
Specifications
Brand Name :
zmkj
Model Number :
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1200~2500usd/pc
Payment Terms :
T/T
Supply Ability :
50pcs per month
Delivery Time :
1-5weeks
Packaging Details :
single wafer case by vacuum package
Material :
GaN layer on sI Substrate
size :
8inch/6inch
GaN thickness :
2-5um
type :
N-type
Application :
semiconductor Device
Description

8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer GaN-on-Si Epiwafer for Micro-LED for RF application

GaN Wafer Characteristic

  1. III-Nitride(GaN,AlN,InN)

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

For Power Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Product specification

Items Values/Scope
Substrate Si
Wafer diameter 4” / 6” / 8”
Epi-layer thickness 4-5 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlXGa1-XN, 0<X<1
Cap layer In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density >9E12/cm2 (20nm Al0.25GaN)
Electron mobility >1800 cm2/Vs (20nm Al0.25GaN)

For RF Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Prodcut Specification

Items Values/Scope
Substrate HR_Si / SiC
Wafer diameter 4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si
Epi-layer thickness 2-3 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlGaN or AlN or InAlN
Cap layer In-situ SiN or GaN

For LED Application

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

ABOUT OUR OEM Factory

Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

Our Factroy Enterprise Vision
we will provide high quality GaN substrate and application technology for the industry with our factory.
High quality GaNmaterial is the restraining factor for the III-nitrides application, e.g. long life
and high stability LDs, high power and high reliability micro-wave devices, High brightness
and high efficiency, energy-saving LED.

-FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100％T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.

Product tags

pantalla led p6 smd

,

led chip smd3030

,

led smd 5050 caracteristicas
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Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

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Product Detail
Brand Name :
zmkj
Model Number :
8inch 6inch AlGaN/GaN HEMT-on-HR Si Epiwafer
Place of Origin :
CHINA
MOQ :
1pcs
Price :
1200~2500usd/pc
Payment Terms :
T/T
Contact Supplier
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch
Dia 200mm AlGaN Si Epi Wafer N Type For Micro LED 6 Inch

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
7 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Sapphire Substrate, Synthetic Gem Stone, Sapphire Optical Windows
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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