SILICON CARBIDE SCHOTTKY DIODE
Electronics Component
Part Number: SC20120PT
Major Parameter:
| Type | VRRM | IF | IR(25ºC) | IR(175ºC) | VF(25ºC) | VF(175ºC) | Tj | Outline |
| V | A | μA | μA | V | V | ºC | ||
| SC20120PT | 1200 | 2×10 | 5 | 50 | 1.8 | 2.5 | 175 | TO-247AB |
| SC30120PT | 1200 | 2×15 | 5 | 50 | 1.8 | 2.5 | 175 | |
| SC40120PT | 1200 | 2×20 | 5 | 50 | 1.8 | 2.5 | 175 |
Brand: JF logo
Package: TO-247AB
Manufacturer: Jinan Jingheng Electronics Co., Ltd.
Description:
SIC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over voltage conditions.
Features:
Application:
· General Purpose
· SMPS, Solar inverter, UPS
· Power Switching Circuits










