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YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
Specifications
Brand Name :
HAMAMATSU
Model Number :
S1336-18BQ
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
2200
Delivery Time :
3 days
Packaging Details :
boxed
Receiving surface :
1.1 × 1.1 mm
Package :
Metal
Package category :
TO-18
Reverse voltage (Max.) :
5V
Description

Product Description:

S1336-18BQ Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes

Features:

Suitable for precise photometry in ultraviolet to near-infrared bands

peculiarity

- High sensitivity in UV band

- Low capacitance

- High reliability

Receiving surface 1.1 × 1.1 mm

Encapsulation metal

Package category TO-18

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 20 pA

Rise time (typical value) 0.1μs

Junction capacitance (typical) 20 pF

Noise equivalent power (typical value) 5.7×10-15 W/Hz1/2

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz

Specifications:

Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 20 pA

YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

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YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

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Product Detail
Brand Name :
HAMAMATSU
Model Number :
S1336-18BQ
Place of Origin :
Japan
MOQ :
1
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
2200
Contact Supplier
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands
YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier
3 Years
guangdong, shenzhen
Since 2006
Business Type :
Manufacturer, Trading Company
Main Products :
Oxygen Gas Sensor, Electrochemical Gas Sensor, Gas Sensor
Total Annual :
900000-1000000
Employee Number :
50~80
Certification Level :
Verified Supplier
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