Product Description:
S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance
Features:
Suitable for precise photometric determination from ultraviolet to red band
Product features
High UV sensitivity: QE = 75% (λ=200 nm)
Low capacitance
Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz
Specifications:
Peak sensitivity wavelength (typical value) | 960 nm |
Sensitivity (typical value) | 0.5 A/W |
Dark current (maximum) | 200 pA |
Rise time (typical value) | 3 mu s |
Junction capacitance (typical value) | 1100 pF
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