MachineU > China Products > Electrical Equipment & Supplies > Power Supplies > Inverters & Converters
AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive
AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive
Specifications
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Delivery Time :
1 - 2 Weeks
Payment Terms :
L/C T/T Western Union
Supply Ability :
18,000,000PCS / Per Day
Model Number :
HXY4266
Product name :
Mosfet Power Transistor
Application :
High Frequency Switching
Material :
Silicon
VDS :
60V
ID (at VGS=10V) :
11A
Description
60V N-Channel AlphaSGT HXY4266

Product Summary

VDS 60V
ID (at VGS=10V) 11A
RDS(ON) (at VGS=10V) < 13.5mΩ
RDS(ON) (at VGS=4.5V) < 18mΩ

General Description

• Low RDS(ON)
• Logic Level Gate Drive
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant

Applications

• High Frequency Switching and Synchronous Rectification

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Electrical Characteristics (T =25°C unless otherwise noted)

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate DriveAlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate DriveAlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate DriveAlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate DriveAlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate DriveAlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Product tags

sata power to molex

,

molex to sata power

,

sata to molex power
Send your message to this supplier
Send Now

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Ask Latest Price
Product Detail
Place of Origin :
ShenZhen China
Brand Name :
Hua Xuan Yang
Certification :
RoHS、SGS
MOQ :
1000-2000 PCS
Price :
Negotiated
Packaging Details :
Boxed
Contact Supplier
AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
7 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Mos Field Effect Transistor
MachineU China Products Electrical Equipment & Supplies Power Supplies Inverters & Converters
Contact Supplier
Submit Requirement