Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP2N1K2EN1
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiate
Payment Terms :
L/C T/T Western Union
Supply Ability :
10,000/Month
Delivery Time :
4~5 week
Packaging Details :
Carton Box
Model Number: :
AP2N1K2EN1
Supplier Type :
Original manufacturer, Odm, Agency, Retailer
Brand Name: :
Original brand
Package Type :
SOT-723(N1)
D/C :
Newest
Description: :
Transistor
Description

MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips

Description

AP2N1K2E series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The SOT-723 Package with very small footprint is suitable for all commercial-industrial surface mount application.

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on min. copper pad of FR4 board

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

Absolute Maximum Ratings@Tj=25°C(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 2.5V 200 mA
IDM Pulsed Drain Current1 400 mA
IS@TA=25℃ Source Current (Body Diode) 125 mA
ISM Pulsed Source Current1(Body Diode) 800 mA
PD@TA=25℃ Total Power Dissipation 0.15 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Thermal Data

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 833 ℃/W

AP2N1K2EN

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=2.5V, ID=200mA - - 1.2 Ω
VGS=1.8V, ID=200mA - - 1.4 Ω
VGS=1.5V, ID=40mA - - 2.4 Ω
VGS=1.2V, ID=20mA - - 4.8 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 0.3 - 1 V
gfs Forward Transconductance VDS=10V, ID=200mA - 1.8 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA
Qg Total Gate Charge

ID=200mA VDS=10V

VGS=2.5V

- 0.7 - nC
Qgs Gate-Source Charge - 0.2 - nC
Qgd Gate-Drain ("Miller") Charge - 0.2 - nC
td(on) Turn-on Delay Time VDS=10V - 2 - ns
tr Rise Time ID=150mA - 10 - ns
td(off) Turn-off Delay Time RG=10Ω - 30 - ns
tf Fall Time .VGS=5V - 16 - ns
Ciss Input Capacitance

VGS=0V

VDS=10V f=1.0MHz

- 44 - pF
Coss Output Capacitance - 14 - pF
Crss Reverse Transfer Capacitance - 10 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=0.13A, VGS=0V - - 1.2 V
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AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Ask Latest Price
Brand Name :
Hua Xuan Yang
Model Number :
AP2N1K2EN1
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiate
Contact Supplier
AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
7 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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