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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor
Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor
Specifications
Brand Name :
Hua Xuan Yang
Model Number :
AP2308GEN
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiable
Payment Terms :
L/C T/T Western Union
Supply Ability :
10,000/Month
Delivery Time :
4~5 week
Packaging Details :
Boxed
Model Number: :
AP2308GEN
Condition: :
New and original
Type: :
Drive IC
Application: :
Electronic Products
D/C: :
NEW
Datasheet: :
Pls contact us
Description

Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device.

The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 4.5V 1.2 A
ID@TA=70℃ Drain Current3, VGS @ 4.5V 1 A
IDM Pulsed Drain Current1 3.6 A
PD@TA=25℃ Total Power Dissipation 0.69 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 180 ℃/W

AP2308GE

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=1.2A - - 600 mΩ
VGS=2.5V, ID=0.3A - - 2 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.25 V
gfs Forward Transconductance VDS=5V, ID=1.2A - 1 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA
Qg Total Gate Charge

ID=1.2A VDS=16V

VGS=4.5V

 - 1.2 2 nC
Qgs Gate-Source Charge - 0.4 - nC
Qgd Gate-Drain ("Miller") Charge - 0.3 - nC
td(on) Turn-on Delay Time

VDS=10V ID=1.2A RG=3.3Ω

VGS=5V

 - 17 - ns
tr Rise Time - 36 - ns
td(off) Turn-off Delay Time - 76 - ns
tf Fall Time - 73 - ns
Ciss Input Capacitance

VGS=0V

.VDS=10V

f=1.0MHz

 - 37 60 pF
Coss Output Capacitance - 17 - pF
Crss Reverse Transfer Capacitance - 13 - pF

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad.

Items:New AP2308GEN

Part number: AP2308GEN

Package: Electronic components

Electronic Components: AP2308GEN

Thanks to choose our product extremely.

We will provide you with the best quality and most cost-effective products.

Our aim is to perfect the product quality for a long-time business.

So, please rest assured to choose, please contact us if have any questions.

Product tags

sot 23 mosfet

,

sot23 mosfet

,

in5408 diode
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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

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Product Detail
Brand Name :
Hua Xuan Yang
Model Number :
AP2308GEN
Certification :
RoHS、SGS
Place of Origin :
China
MOQ :
Negotiable
Price :
Negotiable
Contact Supplier
Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Active Member
7 Years
guangdong, shenzhen
Since 2008
Business Type :
Manufacturer
Main Products :
Mosfet Power Transistor, Tip Power Transistors, Silicon Power Transistor
Total Annual :
8000000-10000000
Employee Number :
150~200
Certification Level :
Active Member
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