BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance
BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance
| Product Attribute | Attribute Value | Search Similar |
|---|---|---|
| Infineon | ||
| MOSFET | ||
| RoHS: | Details | |
| Si | ||
| SMD/SMT | ||
| TDSON-8 | ||
| N-Channel | ||
| 1 Channel | ||
| 30 V | ||
| 230 A | ||
| 1.1 mOhms | ||
| - 20 V, + 20 V | ||
| 2 V | ||
| 68 nC | ||
| - 55 C | ||
| + 150 C | ||
| 96 W | ||
| Enhancement | ||
| OptiMOS | ||
| Reel | ||
| Cut Tape | ||
| MouseReel | ||
| Brand: | Infineon Technologies | |
| Configuration: | Single | |
| Fall Time: | 6.2 ns | |
| Forward Transconductance - Min: | 80 S | |
| Height: | 1.27 mm | |
| Length: | 5.9 mm | |
| Product Type: | MOSFET | |
| Rise Time: | 9.2 ns | |
| 5000 | ||
| Subcategory: | MOSFETs | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 35 ns | |
| Typical Turn-On Delay Time: | 6.4 ns | |
| Width: | 5.15 mm | |
| Part # Aliases: | BSC11N3LSIXT SP000884574 BSC011N03LSIATMA1 | |
| Unit Weight: | 0.003683 oz |