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IMZ120R090M1H INFINEON N Channel Mosfet Diode 1200 V 26A Tc 115W Tc Hrough Hole PG-TO247-4-1
IMZ120R090M1H INFINEON N Channel Mosfet Diode 1200 V 26A Tc 115W Tc Hrough Hole PG-TO247-4-1
Specifications
Brand Name :
Infineon Technologies
Model Number :
IMZ120R090M1H
Certification :
RoHS
Place of Origin :
United States
MOQ :
30 PCS
Price :
Negotiable
Payment Terms :
L/C, D/A, D/P, T/T
Supply Ability :
18K PCS
Delivery Time :
2-3 DAYS
Packaging Details :
30 PCS/Tube
Category :
Single FETs, MOSFETs
Mfr :
Infineon Technologies
Series :
CoolSiC
Product Status :
Active
FET Type :
N-Channel
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1200 V
Current - Continuous Drain (Id) @ 25°C :
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
15V, 18V
Rds On (Max) @ Id, Vgs :
117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id :
5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs :
21 nC @ 18 V
Vgs (Max) :
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds :
707 pF @ 800 V
Power Dissipation (Max) :
115W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO247-4-1
Package / Case :
TO-247-4
Description

IMZ120R090M1H N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1

Features:IMZ120R090M1H

Category Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolSiC
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-1
Package / Case TO-247-4
Base Product Number IMZ120

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names 448-IMZ120R090M1HXKSA1
IMZ120R090M1HXKSA1-ND
SP001946182
Standard Package 30

Data Picture:https://www.infineon.com/dgdl/Infineon-IMZ120R090M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fda8396690


IMZ120R090M1H INFINEON N Channel Mosfet Diode 1200 V 26A Tc 115W Tc Hrough Hole PG-TO247-4-1









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Product Detail
Brand Name :
Infineon Technologies
Model Number :
IMZ120R090M1H
Certification :
RoHS
Place of Origin :
United States
MOQ :
30 PCS
Price :
Negotiable
Contact Supplier
IMZ120R090M1H INFINEON N Channel Mosfet Diode 1200 V 26A Tc 115W Tc Hrough Hole PG-TO247-4-1

Shenzhen Zhaocun Electronics Co., Ltd.

Active Member
3 Years
shenzhen
Since 2012
Business Type :
Distributor/Wholesaler, Agent, Seller
Main Products :
Memory IC Chip, Sensor Chips, Power IC Chip
Total Annual :
1000000-5000000
Employee Number :
100~150
Certification Level :
Active Member
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