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MMRF1314HR5
MMRF1314HR5
MMRF1314HR5
MMRF1314HR5
MMRF1314HR5
MMRF1314HR5
Specifications
Description :
MMRF1314HR5: This is an RF power transistor that employs LDMOS technology and is packaged in SOT1787, making it suitable
Stock :
5200-20000
MOQ :
1000pcs
Price :
Negotiated
Payment Terms :
T/T
Shipping Method :
LCL, AIR, FCL, Express
Package :
SOT1787
Operating Frequency :
1200 to 1400 MHz
Output Power: :
1000 W (Peak)
Gate-Source Voltage (Vgs) :
-6 V to +10 V
Description

MMRF1314HR5 is an RF power transistor manufactured by NXP, specifically designed for high-power RF applications. Here are the detailed specifications of this product:

Basic Parameters

  • Product Type: RF MOSFET Transistors (Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors)
  • Manufacturer: NXP
  • Polarity: N-Channel
  • Package: SOT1787
  • Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)

Electrical Parameters

  • Operating Frequency: 1200 to 1400 MHz
  • Output Power: 1000 W (Peak)
  • Typical Gain (dB): 15.5 dB @ 1200 MHz (Specific gain may vary with frequency)
  • Drain-Source Breakdown Voltage (Vds): Not specified directly, but LDMOS transistors generally have high breakdown voltages
  • Continuous Drain Current (Id): Not specified directly, but determined by the application and design requirements
  • Gate-Source Voltage (Vgs): -6 V to +10 V (Range for controlling gate voltage)
  • Power Dissipation (Pd): Not specified directly, but requires good heat dissipation design for high-power applications

Operating Temperature

  • Maximum Operating Temperature: +150°C
  • Minimum Operating Temperature: -40°C

Application Characteristics

  • Broadband Operation: Internal input and output matching for convenient broadband operation and usage
  • Configuration Flexibility: Can be used in single-ended, push-pull, or quadrature configurations
  • High Robustness: Suitable for pulsed applications, particularly excelling in high-power military and commercial L-band radar applications

Additional Information

  • Package/Case: SMD/SMT (Surface-Mount Device/Surface-Mount Technology) packaging, suitable for surface-mount technology
  • Packing Quantity: Typically packaged in certain quantities (e.g., 50 pieces) per unitMMRF1314HR5

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MMRF1314HR5

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Product Detail
Description :
MMRF1314HR5: This is an RF power transistor that employs LDMOS technology and is packaged in SOT1787, making it suitable
Stock :
5200-20000
MOQ :
1000pcs
Price :
Negotiated
Payment Terms :
T/T
Shipping Method :
LCL, AIR, FCL, Express
Contact Supplier
MMRF1314HR5
MMRF1314HR5
MMRF1314HR5

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2012
Business Type :
Agent, Importer, Exporter, Trading Company, Seller
Main Products :
MCU IC, FFC FPC Connectors, Clock Fanout Buffer
Total Annual :
10000000-15000000
Employee Number :
160~200
Certification Level :
Verified Supplier
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