IRFR5305PbF
IRFU5305PbF
Fifth Generation HEXFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
 
 
Absolute Maximum Ratings 
 
| 
			 Parameter  | 
			
			 Max.  | 
			
			 Units  | 
		|
| 
			 ID @ TC = 25°C  | 
			
			 Continuous Drain Current, VGS @ -10V  | 
			
			 -31  | 
			
			 A  | 
		
| 
			 ID @ TC = 100°C  | 
			
			 Continuous Drain Current, VGS @ -10V  | 
			
			 -22  | 
		|
| 
			 IDM  | 
			
			 Pulsed Drain Current  |