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SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
Specifications
Brand Name :
Microchip
Model Number :
SST26VF032B-104I/MF
Certification :
ROHS
Place of Origin :
Original Factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union，Paypal
Supply Ability :
100000pcs
Delivery Time :
1-3Days
Packaging Details :
BOX
Series :
SST26VF032B
Voltage :
2.7-3.6V or 2.3-3.6V
Feature :
Fast Erase Time
Memory capacity :
32M-bit
Application :
LCD Monitors, Flat Panel TV, Printers, GPS, MP3
Package :
SOIC8 DIP8
Clock frequency :
80/104 MHz High Speed
Interface :
Serial Quad I/O (SQI)
Description

SST26VF032B-104I/MF Flash Memory Chip IC Microchip 32 Mbit Low Power Consumption

GENERAL DESCRIPTIONS

The Serial Quad I/O™ (SQI™) family of flash-memory devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count package. SST26VF032B/032BA also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board space and ultimately lower system costs.

All members of the 26 Series, SQI family are manufactured with proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

SST26VF032B/032BA significantly improve performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.3-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
FEATURES

• Single Voltage Read and Write Operations
- 2.7-3.6V or 2.3-3.6V
• Serial Interface Architecture
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- Mode 0 and Mode 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 2.7-3.6V: 104 MHz max
- 2.3-3.6V: 80 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby Current: 15 µA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay block
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte, Secure ID
- 64 bit unique, factory pre-programmed identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C
• Packages Available
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIJ (5.28 mm)
- 24-ball TBGA (6mm x 8mm)
• All devices are RoHS compliant
The SST26VF032B/032BA SQI memory array is organized in uniform, 4 KByte erasable sectors with the following erasable blocks: eight 8 KByte parameter, two 32 KByte overlay, and sixty-two 64 KByte overlay blocks

ATFU Excess Inventory :

SST26VF032B-104I/MF
SST26VF032BT-104I/MF
SST26VF032BA-104I/MF
SST26VF032BAT-104I/MF
SST26VF032B-104V/MF
SST26VF032BT-104V/MF
SST26VF032B-104I/SM
SST26VF032BT-104I/SM
SST26VF032BA-104I/SM
SST26VF032BAT-104I/SM
SST26VF032B-104V/SM
SST26VF032BT-104V/SM
SST26VF032B-104I/TD

Product tags

samsung 18650 22f sdi

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intel xeon e52640v4

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intel xeon e52600
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SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption

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Product Detail
Brand Name :
Microchip
Model Number :
SST26VF032B-104I/MF
Certification :
ROHS
Place of Origin :
Original Factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption
SST26VF032B-104I/MF Flash Memory Chip IC Micro 32 Mbit Low Power Consumption

Shenzhen ATFU Electronics Technology ltd

Active Member
6 Years
guangdong, shenzhen
Since 2012
Business Type :
Distributor/Wholesaler, Agent, Exporter
Main Products :
MCU Chips, Flash Memory Chip, Programmable IC Chip
Total Annual :
500,000-100,0000
Employee Number :
100~120
Certification Level :
Active Member
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