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MT46V32M16P-5B:J TR IC DRAM 512MBIT PARALLEL 66TSOP Micron Technology Inc.
MT46V32M16P-5B:J TR IC DRAM 512MBIT PARALLEL 66TSOP Micron Technology Inc.
Specifications
Brand Name :
Micron Technology Inc.
Model Number :
MT46V32M16P-5B:J TR
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Delivery Time :
3-5 work days
Packaging Details :
anti-static bag & cardboard box
Memory Type :
Volatile
Memory Format :
DRAM
Technology :
SDRAM - DDR
Memory Size :
512Mbit
Memory Organization :
32M x 16
Memory Interface :
Parallel
Clock Frequency :
200 MHz
Write Cycle Time - Word, Page :
15ns
Access Time :
700 ps
Voltage - Supply :
2.5V ~ 2.7V
Operating Temperature :
0°C ~ 70°C (TA)
Mounting Type :
Surface Mount
Package / Case :
66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package :
66-TSOP
Description

Product Details

Functional Description

The DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.

Features

• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto refresh
– 64ms, 8192-cycle(Commercial and industrial)
– 16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
• tRAS lockout supported (tRAP = tRCD)

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tape & Reel (TR) Alternate Packaging
Package-Case 66-TSSOP (0.400", 10.16mm Width)
Operating-Temperature 0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply 2.5 V ~ 2.7 V
Supplier-Device-Package 66-TSOP
Memory Capacity 512M (32M x 16)
Memory-Type DDR SDRAM
Speed 5ns
Format-Memory RAM

Descriptions

SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 66-TSOP
DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.6V 66-Pin TSOP T/R
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MT46V32M16P-5B:J TR IC DRAM 512MBIT PARALLEL 66TSOP Micron Technology Inc.

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Product Detail
Brand Name :
Micron Technology Inc.
Model Number :
MT46V32M16P-5B:J TR
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Contact Supplier
MT46V32M16P-5B:J TR IC DRAM 512MBIT PARALLEL 66TSOP Micron Technology Inc.

Sanhuang electronics (Hong Kong) Co., Limited

Verified Supplier
3 Years
shenzhen
Since 2005
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit IC, RF IC Module, Power Management ICs
Total Annual :
1000000-3000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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