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IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc
IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc
Specifications
Brand Name :
ISSI, Integrated Silicon Solution Inc
Model Number :
IS61NLP51236B-200B3LI
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Delivery Time :
3-5 work days
Packaging Details :
anti-static bag & cardboard box
Memory Type :
Volatile
Memory Format :
SRAM
Technology :
SRAM - Synchronous, SDR
Memory Size :
18Mbit
Memory Organization :
512K x 36
Memory Interface :
Parallel
Clock Frequency :
200 MHz
Write Cycle Time - Word, Page :
-
Access Time :
3 ns
Voltage - Supply :
3.135V ~ 3.465V
Operating Temperature :
-40°C ~ 85°C (TA)
Mounting Type :
Surface Mount
Package / Case :
165-TBGA
Supplier Device Package :
165-TFBGA (13x15)
Description

Product Details

DESCRIPTION

The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 209- ball (x72) PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 165-TBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3.135 V ~ 3.465 V
Supplier-Device-Package 165-TFBGA (13x15)
Memory Capacity 18M (512K x 36)
Memory-Type SRAM - Synchronous
Speed 200MHz
Format-Memory RAM

Descriptions

SRAM - Synchronous Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 165-TFBGA (13x15)
SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3ns 165-Pin TFBGA
SRAM 18Mb, 200Mhz 512K x 36 Sync SRAM
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IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc

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Product Detail
Brand Name :
ISSI, Integrated Silicon Solution Inc
Model Number :
IS61NLP51236B-200B3LI
MOQ :
1
Price :
Based on current price
Payment Terms :
T/T
Supply Ability :
In stock
Contact Supplier
IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc

Sanhuang electronics (Hong Kong) Co., Limited

Verified Supplier
3 Years
shenzhen
Since 2005
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit IC, RF IC Module, Power Management ICs
Total Annual :
1000000-3000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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