POWER-SEM
	Single IGBT Driver
	1DI 825
	single high-power IGBT driver core
	Features
	● ASIC single IGBT Driver Core
	● Suitable for all IGBTs up to 1200V/1700V
	● Short circuit and over current protection by
	VCEsat monitoring
	● Independent monitoring of each IGBT VCEsat
	protection (T)
	● Isolation due to nanometer amorphous transformer
	● Supply undervoltage protection (<12.5V)
	● Error memory
	● Error “soft turn-off”
	● Turn-off spike restrain by “dynamic soft
	turnoff”
	● Internal isolated DC/DC power supply
	● ±32A peak current output
	● IGBT gate drive voltage+15V/-9V
	● 650ns signal conversion time
	● 110ns error signal feedback time
	● 400ns narrow pulse inhibit eliminate radio
	frequency interference
	● Max. working frequency 100kHz
	● error synchronization function, low level
	effectively
	● Clearance distance from primary side to
	secondary side is 42mm
	 
	Typical Applications
	● Single or bridge circuit
	● Inverter
	● Welding machine
	● Induction heating
	● Converter
	● High power UPS
	● High power high frequency SMPS