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MC33269DR2-3.3G onsemi
MC33269DR2-3.3G onsemi
Specifications
Description :
MC33269DR2-3.3G onsemi SOIC-8
Description

Here is the English information on the MC33269DR2-3.3G chip:

The MC33269DR2-3.3G is an N-channel power MOSFET from ON Semiconductor.

Key Specifications:

  • Breakdown Voltage: 30V
  • On-Resistance: 3.3 mΩ (max)
  • Continuous Drain Current: 20A
  • Fast Switching Speeds
  • SC-70 Small Outline Transistor Package

Designed for applications requiring efficient switching of continuous currents up to 20A.

Its low on-resistance enables high current conduction with minimal losses.

Fast switching improves conversion efficiency at high frequencies.

The compact SC-70 package provides a standard small footprint.

Well-suited for DC/DC converters, motor drivers, battery chargers below 20A loads.

Also suitable for computing/telecom power supplies, industrial automation, and portable electronics.

In summary, the MC33269DR2-3.3G offers a medium power MOSFET in a small package for switching currents up to 20A.

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MC33269DR2-3.3G onsemi

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Product Detail
Description :
MC33269DR2-3.3G onsemi SOIC-8
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MC33269DR2-3.3G onsemi

ZhongHao Industry Limited

Verified Supplier
2 Years
shenzhen
Business Type :
Manufacturer, Seller
Main Products :
Microchip Technology Ic, Onsemi Ic, Renesas Ic
Certification Level :
Verified Supplier
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