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NCP81278TMNTXG onsemi
NCP81278TMNTXG onsemi
Specifications
Description :
NCP81278TMNTXG onsemi QFN-20
Description

Here is the English description of the NCP81278TMNTXG chip:

  • Breakdown Voltage: 30V
  • Continuous Drain Current: 8.2A
  • On-Resistance: 28 mΩ (typ)
  • Fast Switching Speeds
  • Power SO-8 Package
  • Integrated Dual N-Channel MOSFET

The NCP81278TMNTXG is a dual N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Each FET can switch up to 8.2A of current
  • Low on-resistance of 28 mΩ minimizes conduction losses
  • Fast switching for high efficiency applications
  • Power SO-8 package provides good thermal dissipation
  • Integrated dual FET reduces component count

Common Applications:

  • Buck regulators and DC-DC converters up to 8.2A
  • Motor drivers and controls requiring dual FET functionality
  • Circuits where board space is constrained

Benefits include a compact 8.2A dual switch with both FETs integrated to simplify design.

Well suited for applications requiring dual switching paths in a single package.

In summary, the NCP81278TMNTXG combines dual 8.2A power MOSFETs in one package for space-efficient power switching.

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NCP81278TMNTXG onsemi

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Product Detail
Description :
NCP81278TMNTXG onsemi QFN-20
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NCP81278TMNTXG onsemi

ZhongHao Industry Limited

Verified Supplier
2 Years
shenzhen
Business Type :
Manufacturer, Seller
Main Products :
Microchip Technology Ic, Onsemi Ic, Renesas Ic
Certification Level :
Verified Supplier
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