2SC2712S-Y,LF / Bipolar Transistors - BJT SM Sig NPN Trans VCEO -50V IC -150mA
Key Specifications
Category: Bipolar Transistors - BJT
Technology: Si
Polarity: NPN
Max Collector Current: 150 mA
Collector-Emitter Voltage: 50 V
Operating Temperature: -55°C to +125°C
Detailed Specifications
| Parameter |
Value |
| Mounting Style |
SMD/SMT |
| Package/Case |
SC-59-3 |
| Configuration |
Single |
| Collector-Base Voltage (VCBO) |
60 V |
| Emitter-Base Voltage (VEBO) |
5 V |
| Collector-Emitter Saturation Voltage |
250 mV |
| Power Dissipation (Pd) |
150 mW |
| Gain Bandwidth Product (fT) |
80 MHz |
| DC Collector/Base Gain (hfe Min) |
70 |
| DC Current Gain (hFE Max) |
700 |
Physical Dimensions
| Dimension |
Value |
| Height |
1.1 mm |
| Length |
2.9 mm |
| Width |
1.5 mm |
| Unit Weight |
0.000282 oz |
Additional Information
Brand: Toshiba
Series: 2SC2712
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Factory Pack Quantity: 3000
Packaging Options: Reel Cut Tape MouseReel
RoHS Status: Details available
Shipping Restrictions: Not currently available in your region