Specifications
Brand Name :
New & Original
Model Number :
2SC2712S-Y,LF
MOQ :
50
Payment Terms :
T/T,Western Union,L/C
Delivery Time :
1-2days
Packaging Details :
original package
Description
2SC2712S-Y,LF / Bipolar Transistors - BJT SM Sig NPN Trans VCEO -50V IC -150mA
Key Specifications
Category: Bipolar Transistors - BJT
Technology: Si
Polarity: NPN
Max Collector Current: 150 mA
Collector-Emitter Voltage: 50 V
Operating Temperature: -55°C to +125°C
Detailed Specifications
Parameter Value
Mounting Style SMD/SMT
Package/Case SC-59-3
Configuration Single
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector-Emitter Saturation Voltage 250 mV
Power Dissipation (Pd) 150 mW
Gain Bandwidth Product (fT) 80 MHz
DC Collector/Base Gain (hfe Min) 70
DC Current Gain (hFE Max) 700
Physical Dimensions
Dimension Value
Height 1.1 mm
Length 2.9 mm
Width 1.5 mm
Unit Weight 0.000282 oz
Additional Information
Brand: Toshiba
Series: 2SC2712
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Factory Pack Quantity: 3000
Packaging Options: Reel Cut Tape MouseReel
RoHS Status: Details available
Shipping Restrictions: Not currently available in your region
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2SC2712S-YLF Bipolar Transistors Integrated Circuit IC Chip BJT SM Sig NPN Trans VCEO 50V 150mA

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Brand Name :
New & Original
Model Number :
2SC2712S-Y,LF
MOQ :
50
Payment Terms :
T/T,Western Union,L/C
Delivery Time :
1-2days
Packaging Details :
original package
Contact Supplier
2SC2712S-YLF Bipolar Transistors Integrated Circuit IC Chip BJT SM Sig NPN Trans VCEO 50V 150mA
2SC2712S-YLF Bipolar Transistors Integrated Circuit IC Chip BJT SM Sig NPN Trans VCEO 50V 150mA
2SC2712S-YLF Bipolar Transistors Integrated Circuit IC Chip BJT SM Sig NPN Trans VCEO 50V 150mA

Countrywell Electronics Co., Ltd.

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2 Years
shenzhen
Since 2012
Business Type :
Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller
Total Annual :
30000000USD-50000000
Employee Number :
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Certification Level :
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