07N10NS BSC070N10NS3GATMA1 Infineon's OptiMOS power MOSFET N-Channel 100 V 90A 114W PG-TDSON-8 IC
Description:
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS.
Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).
Potential Applications:
 Synchronous rectification for AC-DC SMPS
 Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
 Isolated DC-DC converters (telecom and datacom systems
 Or-ing switches and circuit breakers in 48V systems
 Class D audio amplifiers
 Uninterruptable power supplies (UPS)
Summary of Features:
 Excellent switching performance
 World’s lowest R DS(on)
 Very low Q g and Q gd
 Excellent gate charge x R DS(on) product (FOM)
 RoHS compliant-halogen free
 MSL1 rated 2
Benefits
Environmentally friendly
 Increased efficiency
 Highest power density
 Less paralleling required
 Smallest board-space consumption
 Easy-to-design products
Specifications:
|  			 Category  			 |  			|
|  			 Transistors - FETs, MOSFETs - Single  			 |  		|
|  			 Mfr  			 |  			 			 Infineon Technologies  			 |  		
|  			 Series  			 |  			 			 OptiMOS™  			 |  		
|  			 Package  			 |  			 			 Tape & Reel (TR)  			 |  		
|  			 Part Status  			 |  			 			 Active  			 |  		
|  			 FET Type  			 |  			 			 N-Channel  			 |  		
|  			 Technology  			 |  			 			 MOSFET (Metal Oxide)  			 |  		
|  			 Drain to Source Voltage (Vdss)  			 |  			 			 100 V  			 |  		
|  			 Current - Continuous Drain (Id) @ 25°C  			 |  			 			 90A (Tc)  			 |  		
|  			 Drive Voltage (Max Rds On, Min Rds On)  			 |  			 			 6V, 10V  			 |  		
|  			 Rds On (Max) @ Id, Vgs  			 |  			 			 7mOhm @ 50A, 10V  			 |  		
|  			 Vgs(th) (Max) @ Id  			 |  			 			 3.5V @ 75µA  			 |  		
|  			 Gate Charge (Qg) (Max) @ Vgs  			 |  			 			 55 nC @ 10 V  			 |  		
|  			 Vgs (Max)  			 |  			 			 ±20V  			 |  		
|  			 Input Capacitance (Ciss) (Max) @ Vds  			 |  			 			 4000 pF @ 50 V  			 |  		
|  			 FET Feature  			 |  			 			 -  			 |  		
|  			 Power Dissipation (Max)  			 |  			 			 114W (Tc)  			 |  		
|  			 Operating Temperature  			 |  			 			 -55°C ~ 150°C (TJ)  			 |  		
|  			 Mounting Type  			 |  			 			 Surface Mount  			 |  		
|  			 Supplier Device Package  			 |  			 			 PG-TDSON-8-1  			 |  		
|  			 Package / Case  			 |  			 			 8-PowerTDFN  			 |  		
|  			 Base Product Number  			 |  			 			 BSC070  			 |  		
| Parametrics | BSC070N10NS3G | 
| Ciss | 3000 pF | 
| Coss | 520 pF | 
| ID (@25°C) max | 90 A | 
| IDpuls max | 360 A | 
| Operating Temperature min max | -55 °C 150 °C | 
| Ptot max | 114 W | 
| Package | SuperSO8 5x6 | 
| Polarity | N | 
| QG (typ @10V) | 42 nC | 
| RDS (on) (@10V) max | 7 mΩ | 
| Rth | 1.1 K/W | 
| VDS max | 100 V | 
| VGS(th) min max | 2.7 V 2 V 3.5 V | 
