ISO9001.pdf
Application: IPD031N06L3G is a high voltage MOSFET transistor widely used in high-power switching power supplies, converters, motor drives, LED lighting and other fields.
Conclusion: IPD031N06L3G has excellent characteristics such as low resistance, high current withstand capacity, low switching loss, and high temperature performance, making it suitable for efficient power conversion circuits.
Parameters:
Drain Source voltage: 60V
Drain current: 100A
Typical resistance: 3.1m Ω
Input capacitance: 3742pF
Output capacitance: 891pF
Gate charge: 60nC
Gate source voltage: ± 20V
Packaging: TO-252 (D-Pak) packaging, size 6.5mm x 9.8mm x 4.6mm, suitable for manual and automatic welding.
Product Technical Specifications | | | | EU RoHS | Compliant with Exemption聽 | ECCN (US) | EAR99 | Part Status | Unconfirmed | SVHC | Yes | SVHC Exceeds Threshold | Yes | Automotive | Yes | PPAP | Unknown | Product Category | Power MOSFET | Configuration | Single | Process Technology | OptiMOS | Channel Mode | Enhancement | Channel Type | N | Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 100 | Maximum Gate Source Voltage (V) | 卤20 | Maximum Continuous Drain Current (A) | 35 | Maximum Drain Source Resistance (mOhm) | 25@10V | Typical Gate Charge @ Vgs (nC) | 23@10V | Typical Gate Charge @ 10V (nC) | 23 | Typical Input Capacitance @ Vds (pF) | 1560@50V | Maximum Power Dissipation (mW) | 71000 | Typical Fall Time (ns) | 3 | Typical Rise Time (ns) | 4 | Typical Turn-Off Delay Time (ns) | 13 | Typical Turn-On Delay Time (ns) | 10 | Minimum Operating Temperature (掳C) | -55 | Maximum Operating Temperature (掳C) | 175 | Supplier Temperature Grade | Automotive | Packaging | Tape and Reel | Mounting | Surface Mount | Package Height | 2.3 | Package Width | 6.22 | Package Length | 6.5 | PCB changed | 2 | Tab | Tab | Standard Package Name | TO-252 | Supplier Package | DPAK | Pin Count | 3 | | | | | |