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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor
IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor
Specifications
Brand Name :
INFINEON
Model Number :
IPD082N10N3
Place of Origin :
original
MOQ :
1pcs
Payment Terms :
D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
57830pcs
Delivery Time :
3
Packaging Details :
4000
Stock :
8000+
Price :
Negotiate
quality： :
Brand new unused
Package / box: :
TO-252
Description

ISO9001.pdf

IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters:
Application:
Used as a high-voltage and high-power load switch
Used as a switch for converters and regulators
Conclusion:
High voltage capability: Vds=100V
Low conduction resistance: Rds (on)=8.2m Ω (typ.)
Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.)
High temperature performance: can operate at temperatures up to 175 ℃
Complies with RoHS directives and lead-free requirements
Parameters:
Vds (drain source voltage): 100V
Vgs (gate source voltage): ± 20V
Id (drain current): 80A
Rds (on) (conduction resistance): 8.2m Ω (typ.)
Qg (gate charge): 135nC (typ.)
Td (on) (start delay time): 16ns (typ.)
Td (off) (shutdown delay time): 60ns (typ.)
Tj (junction temperature): 175 ℃
Complies with RoHS directives and lead-free requirements.

Product Technical Specifications
EU RoHS Compliant with Exemption聽
ECCN (US) EAR99
Part Status Unconfirmed
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive Unknown
PPAP Unknown
Product Category Power MOSFET
Configuration Single
Process Technology OptiMOS 3
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) 卤20
Maximum Gate Threshold Voltage (V) 3.5
Maximum Continuous Drain Current (A) 80
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 8.2@10V
Typical Gate Charge @ Vgs (nC) 42@10V
Typical Gate Charge @ 10V (nC) 42
Typical Input Capacitance @ Vds (pF) 2990@50V
Maximum Power Dissipation (mW) 125000
Typical Fall Time (ns) 8
Typical Rise Time (ns) 42
Typical Turn-Off Delay Time (ns) 31
Typical Turn-On Delay Time (ns) 18
Minimum Operating Temperature (掳C) -55
Maximum Operating Temperature (掳C) 175
Packaging Tape and Reel
Mounting Surface Mount
Package Height 2.41(Max)
Package Width 6.22(Max)
Package Length 6.73(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-252
Supplier Package DPAK
Pin Count 3
Lead Shape Gull-wing
Product tags

mosfet ic number

,

npn transistor number

,

n channel mosfet transistor
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IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

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Product Detail
Brand Name :
INFINEON
Model Number :
IPD082N10N3
Place of Origin :
original
MOQ :
1pcs
Payment Terms :
D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
57830pcs
Contact Supplier
video
IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

HK LIANYIXIN INDUSTRIAL CO., LIMITED

Site Member
4 Years
shenzhen
Since 2016
Business Type :
Distributor/Wholesaler
Main Products :
Ic Integrated Circuit, SMD Integrated Circuit, Digital Integrated Circuits
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Site Member
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