HACC100S10V101 Bordered Single Layer Ceramic Chip Capacitor (10pF,100V)

What is a Single-Sided Bordered (Margin) Single Layer Capacitor?

In high-density microwave hybrid integrated circuits (ICs), engineers face a common assembly challenge: during die attachment, conductive silver epoxy (such as H20E) can bleed out, creep up the sides of the chip capacitor, and bridge with the top electrode, causing a catastrophic short circuit.

The HACC100S10V101 resolves this with its Single-Sided Bordered (Margin) Design. As shown in the product image, the top surface consists of a central high-purity gold electrode (TiW-Au) surrounded by a precise, un-metallized dark ceramic border (Margin). This exposed ceramic frame acts as a physical barrier, effectively blocking any epoxy bleed-out from contacting the active top electrode, guaranteeing zero-defect bonding during automated assembly.

Material & Thin-Film Metallization Structure
The HACC100S10V101 features a premium, multi-layer thin-film metallization system to ensure long-term reliability under severe thermal and mechanical stresses:

•Top Electrode: TiW-Au (Titanium-Tungsten / Gold) with an overall gold thickness of ≥ 2.5 µm Min. This thick, high-purity gold layer is optimized for high-reliability thermosonic gold wire bonding (Au wire-bonding).
•Bottom Electrode: TiW-Pt-Au (Titanium-Tungsten / Platinum / Gold) with an overall thickness of ≥ 2.5 µm Min. The inclusion of a Platinum (Pt) barrier layer prevents silver-to-gold intermetallic migration when using silver conductive epoxies, ensuring maximum adhesion.

Dimensions

Technical Specifications (HACC100S10V101)

Assembly & Gold Wire Bonding Best Practices

To achieve an optimal assembly yield when integrating the HACC100S10V101 into your RF modules:

1.Conductive Epoxy Die-Attach:
•Mounting with conductive silver epoxy (e.g., H20E) is highly recommended.
•Recommended Baking/Curing Profile: Bake at 120℃ for 30 minutes to ensure robust mechanical and electrical attachment.
2.Gold Wire Bonding Wedge Margin:
•To prevent micro-cracking of the ceramic or delamination of the gold film during thermosonic wire-bonding, the bonding ball/wedge must be placed at least 25 µm away from the outer edge of the gold pad.
3.Die Placement Force:
•Keep the pick-and-place nozzle force controlled to prevent localized stress on the single-layer ceramic body.

Typical High-Frequency Microwave Applications
•5G & 6G Millimeter-Wave (mmWave) Small Cells
•Optoelectronic Transceivers (100G/400G SFP/QSFP Modules)
•GaAs, GaN & InP High-Power RF Amplifiers (Bypass & Decoupling)
•LNA (Low Noise Amplifier) DC Blocking Circuits
•Satellite Communications (Satcom) and Tactical Avionics