HACC471S50V402 Transient-Spike-Rugged MOS Capacitor — 470 pF 50 V Single Layer Chip with Dielectric Passivation

The HACC471S50V402 is a 470 pF ±10% single-layer MOS (metal-oxide-semiconductor) capacitor rated at 50 V DC, fabricated on float-zone silicon (>1000 Ω·cm) with an amorphous thermal SiO₂ dielectric and TiW-Au / TiW-Pt-Au metallization. A MOS capacitor is a single-layer capacitor formed by a metal-oxide-semiconductor structure (thermal silicon dioxide grown on a conductive silicon substrate), valued in RF and power hybrid circuits for its low ESL, stable capacitance and high insulation resistance.

This device is designed for hybrid microcircuits and power modules exposed to repetitive voltage transients and humid operating environments, where stable capacitance, high insulation resistance and arc-over-free operation under DC bias are required. Standard chip outline is 0.60 mm × 0.60 mm × 0.18 mm (±25 µm); custom capacitance, voltage rating, die geometry and metallization are available on request.

Transient Voltage Spike Ruggedness — Verified by ESD and DWV Testing

Overvoltage robustness of a MOS capacitor is defined by measurable, production-verified parameters. The HACC471S50V402 is qualified and 100% production tested as follows:

• ESD withstand voltage >2 kV HBM (Class 2 per JESD22-A114) for handling and assembly ESD events;
• Dielectric withstanding voltage (DWV) 125 V DC (250% of rated voltage, 5 s dwell), tested on 100% of production parts;
• Step-edge dielectric passivation suppresses arc-over and surface flashover between top and bottom electrodes under high DC bias and reduced-pressure operation;
• Capacitance shift below 2% and no delamination after 500 temperature cycles from -65°C to +150°C (ΔT = 215°C);
• Insulation resistance remains stable at rated voltage after repeated transient stress and thermal cycling.

Electrical Characteristics (typical, 25°C unless noted)

Typical Applications

DC bias decoupling and transient suppression in GaN and SiC gate driver stages; snubber and clamp networks of motor drives and industrial power converters; RF power amplifier bias networks; outdoor wireless and base-station modules exposed to humidity; avionics and satellite payload hybrid microcircuits requiring transient and moisture robustness.