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Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Specifications
Price :
Negotiable
Model Number :
Customizable
Usage :
Industry Usage
Chemical Composition :
Al2O3, SiO2
Sic Content :
85%
Maximum Temperature :
1600℃
Characteristics :
High wear resistance
Thermal Expansion Coefficient :
4.0-4.5 × 10^-6 /K
Material Composition :
4%Si >96%Sic
Working Temperature :
1650
Advantage :
Wear and abrasion resistance
Purity :
98%
Material :
SiC
Acid Alkaline Proof :
excellent
Solubility :
Insoluble
Open Porosity :
<0.1%
Flexural Strength :
380MPa
MOQ :
Negotiable
Brand Name :
KEGU
Place of Origin :
China
Payment Terms :
L/C,D/A,D/P,T/T,Western Union,MoneyGram
Packaging Details :
Strong wooden box for Global shipping
Delivery Time :
Negotiable
Composition:SiC :
>98%
Color :
Black
Density :
>3.05g/cm3
Max. Service Temp :
1650°C
Description
Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing
Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures.
Key Material Advantages
  • Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer
  • Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life
  • High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads
  • Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling
Silicon Carbide (SiC) Material Properties
Property Value
Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730 °C (decomposes)
Density 3.0 - 3.2 g/cm³
Electrical Resistivity 1 - 4 x 10¹ Ω*m
Poisson's Ratio 0.15 - 0.21
Specific Heat 670 - 1180 J/kg*K
Comparative Specifications: SiC Tray Types
Type Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity > 99.5% > 98% > 88%
Max. Working Temp. 1650 °C 1550 °C 1300 °C
Bulk Density (g/cm³) 2.7 3.1 > 3.0
Apparent Porosity < 15% < 2.5% < 0.1%
Flexural Strength (MPa) 110 400 380
Compressive Strength (MPa) > 300 2200 2100
Thermal Expansion (10⁻⁶/°C) 4.6 (at 1200°C) 4.0 (at <500°C) 4.4 (at <500°C)
Thermal Conductivity (W/m*K) 35 - 36 110 65
Primary Characteristics High-Temperature Resistance, High Purity High Fracture Toughness Excellent Chemical Resistance
Critical Features for ICP Etching
  • Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients
  • Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency
  • Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer
Primary Applications
  • Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy
  • LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes
  • Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability
We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.
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Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching

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Product Detail
Price :
Negotiable
Model Number :
Customizable
Usage :
Industry Usage
Chemical Composition :
Al2O3, SiO2
Sic Content :
85%
Maximum Temperature :
1600℃
Contact Supplier
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching

Shaanxi KeGu New Material Technology Co., Ltd

Verified Supplier
2 Years
Shaanxi, tongchuan
Since 2017
Business Type :
Manufacturer, Trading Company
Main Products :
Silicon Carbide Ceramic, Heating Elements, Ceramic Powder
Certification Level :
Verified Supplier
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