| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Density (g/cm3) | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption (%) | 0 | 0.1 | 0 | 0.1 |
| Sinter Temperature (°C) | 1700 | 2200 | 1500 | 1800 |
| Property | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Rockwell Hardness (HV) | 1700 | 2200 | 1300 | 1400 |
| Bend Strength (kgf/mm2) | 3500 | 4000 | 9000 | 7000 |
| Compression Intensity (Kgf/mm2) | 30000 | 20000 | 20000 | 23000 |
| Property | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Maximum working temperature (°C) | 1500 | 1600 | 1300 | 1400 |
| Thermal expansion coefficient (0-1000°C) (/°C) | 8.0*10-6 | 4.1*10-6(0-500°C) 5.2*10-6(500-1000°C) | 9.5*10-6 | 2.0*10-6(0-500°C) 4.0*10-6(500-1000°C) |
| Thermal Shock resistance T(°C) | 200 | 250 | 300 | 400-500 |
| Thermal Conductivity W/m.k | 31 (25°C) 16 (300°C) | 100 | 3 | 25 |
| Property | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Resisting rate of Volume (◎.cm) | >1012 (20°C) 1012-1013 (100°C) >1012 (300°C) | 106-108 (20°C) | >1010 (20°C) | >1011 (20°C, 100°C, 300°C) |
| Insulation Breakdown Intensity (KV/mm) | 18 | semiconductor | 9 | 17.7 |
| Dielectric Constant (1 MHz) (E) | 10 | - | 29 | 7 |
| Dielectric Dissipation (tg o) | 0.4*10-3 | - | - | - |