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2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
Specifications
Description
2.8 Density 1600°C Silicon Carbide Heating Element - High Efficiency
2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
Our high-performance silicon carbide rod series, with our flagship SLW and LW helix models at its core, is engineered through leading-edge reaction sintering technology. It provides the ideal heating solution for zirconia dental sintering, laboratory research and specialized industrial furnaces.
Product Series Overview
To meet the demands of diverse application scenarios, we offer the following product series:
  • Flagship Series (Helix Type): SLW (Double Helix) and LW (Single Helix), delivering exceptional thermal efficiency and temperature uniformity.
2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
Versatile Application Series

General Purpose (GD)

Lithium Battery (GDL)

Glass Industry (GD3)

High-Density (GDH)


2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod 2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod 2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod 2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod


Product Features & Core Specifications
Key Feature Technical Advantage & Specification
Efficient Heating A high density (2.8 g/cm³) and unique helix design enable rapid heat-up and superior energy efficiency.
Long Service Life Its dense structure, with minimal closed porosity, translates to exceptional oxidation resistance and an ultra-long service life.
Broad Temperature Adaptability It operates at up to 1600°C with a recommended stable range of 600-1600°C for broad compatibility.
Contamination-Free Process High-purity materials and processes ensure a contamination-free environment for even the most atmosphere-sensitive applications.
Easy & Reliable Installation Supports vertical or horizontal installation without high-temperature supports. Includes high-temperature ceramic accessories and aluminum wires for stable connections.
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2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod

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2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod
2.8 Density 1600°C High Efficiency Silicon Carbide Heating Element with Reaction Bonded SiC Rod

Shaanxi KeGu New Material Technology Co., Ltd

Verified Supplier
2 Years
Shaanxi, tongchuan
Since 2017
Business Type :
Manufacturer, Trading Company
Main Products :
Silicon Carbide Ceramics, Porous Ceramic Membranes, Thermocouple Protection Tubes
Certification Level :
Verified Supplier
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