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P Type , Gallium-Doped Germanium Wafer Substrate , 4”
P Type , Gallium-Doped Germanium Wafer Substrate , 4”
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Packaging Details :
Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name :
Germanium Substrate wafer
Wafer Diamter :
4 inch
Conduction Type :
P Type
Thickness :
200~550um
Epi ready :
Yes
application :
opto-electronics industry
Description

P Type , Gallium-Doped Germanium Wafer Substrate , 4”

PAM-XIAMEN offers Germanium wafer Single Crystals and Wafers grown by VGF / LEC, we have a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch. Germanium wafer is an elemental and popular semiconductor material, due to its excellent crystallographic properties and unique electric properties, Germanium wafer is widely used in Sensor, Solar cell and Infrared optics applications. PAM-XIAMEN can provide low dislocation and epi ready Germanium wafers to meet your unique germanium requirement.

Standard Specs Of Germanium Crystal And Wafer

Crystal Orientation <111>,<100> and <110> ± 0.5o or custom orientation
Crystal boule as grown 1″ ~ 6″ diameter x 200 mm Length
Standard blank as cut 1″x 0.5mm 2″x0.6mm 4″x0.7mm 5″&6″x0.8mm
Standard Polished wafer(One/two sides polished) 1″x 0.30 mm 2″x0.5mm 4″x0.5mm 5″&6″x0.6mm

Specification of Germanium Wafer

Item Specifications Remarks
Growth Method VGF
Conduction Type p type
Dopant Gallium
Wafer Diamter 4 inch
Crystal Orientation (100),(111),(110)
Thickness 200~550 um
OF EJ or US
Carrier Concentration request upon customers
Resistivity at RT (0.001~80) Ohm.cm
Etch Pit Density <5000 /cm2
Laser Marking upon request
Surface Finish P/E or P/P
Epi ready Yes
Package Single wafer container or cassette

What Is The Germanium Wafer Production Process?

The process of transforming an element into thin wafers with a damage free, mirror-like, clean surface is no easy task. It requires a series of steps. Here are the 5 steps in the germanium wafer production process:

1) Highly pure germanium is attained during zone refining.

2) The Czochralski process transforms the element into a germanium crystal.

3) The crystal is manufactured into a wafer through the process of cutting, grinding and etching.

4) The Ge wafers are cleaned and inspected. This step requires the wafers to be polished on either one or both sides, depending on the customers needs.

5) The high-quality wafers are packed under a nitrogen atmosphere in single wafer containers.

Are You Looking for Germanium Wafers?

PAM-XIAMEN offer germanium wafers. No matter what the project or use is, we have germanium wafers available at competitive prices. Enquire us today to learn more about how we can help you with all your wafer needs.

Product tags

gallium arsenide wafer

,

gallium nitride wafer

,

germanium substrate
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P Type , Gallium-Doped Germanium Wafer Substrate , 4”

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Supply Ability :
10,000 wafers/month
Delivery Time :
5-50 working days
Contact Supplier
P Type , Gallium-Doped Germanium Wafer Substrate , 4”

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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