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GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics
GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics
Specifications
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Delivery Time :
5-50 working days
Price :
By Case
name :
GaAs wafer
application :
LD and Microelectronics
size :
2-6 inch
type :
Gallium Arsenide Wafer
Dopant :
Silicon
Thickness :
220~450um
Description

GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED ,LD And Microelectronics

Product Description

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications Remarks
Conduction Type SC/n-type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Silicon Zn available
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut availalbe
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000cm2/V.sec
Etch Pit Density <5000/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~450um
Epitaxy Ready Yes
Package Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item Specifications Remarks
Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15°off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000 cm2/V.sec
Etch Pit Density <500/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~350um
Epitaxy Ready Yes
Package Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating
Growth Method VGF
Dopant Undoped
Wafer Diamter 2, 3 & 4 inch Ingot available
Crystal Orientation (100)+/- 0.5°
OF EJ, US or notch
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <8000 /cm2
Laser Marking upon request
Surface Finish P/P
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Semi-insulating
Grow Method VGF
Dopant Undoped
Type N
Diamater(mm) 150±0.25
Orientation (100)0°±3.0°
NOTCH Orientation 〔010〕±2°
NOTCH Deepth(mm) (1-1.25)mm 89°-95°
Carrier Concentration N/A
Resistivity(ohm.cm) ＞1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s) N/A
Dislocation N/A
Thickness(µm) 675±25
Edge Exclusion for Bow and Warp(mm) N/A
Bow(µm) N/A
Warp(µm) ≤20.0
TTV(µm) ≤10.0
TIR(µm) ≤10.0
LFPD(µm) N/A
Polishing P/P Epi-Ready

2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item Specifications Remarks
Diamater(mm) Ф 50.8mm ± 1mm
Thickness 1-2um or 2-3um
Marco Defect Density ≤ 5 cm-2
Resistivity(300K) >108 Ohm-cm
Carrier ＜0.5ps
Dislocation Density <1x106cm-2
Useable Surface Area ≥80%
Polishing Single side polished
Substrate GaAs Substrate
* We also can provide poly crystal GaAs bar, 99.9999%(6N).

(GaAs) Gallium Arsenide Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications Remarks
Conduction Type SC/n-type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Silicon Zn available
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut availalbe
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000cm2/V.sec
Etch Pit Density <5000/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~450um
Epitaxy Ready Yes
Package Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers for LD Applications

Item Specifications Remarks
Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000 cm2/V.sec
Etch Pit Density <500/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~350um
Epitaxy Ready Yes
Package Single wafer container or cassette

(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Insulating
Growth Method VGF
Dopant Undoped
Wafer Diamter 2, 3 & 4 inch Ingot available
Crystal Orientation (100)+/- 0.5°
OF EJ, US or notch
Carrier Concentration n/a
Resistivity at RT >1E7 Ohm.cm
Mobility >5000 cm2/V.sec
Etch Pit Density <8000 /cm2
Laser Marking upon request
Surface Finish P/P
Thickness 350~675um
Epitaxy Ready Yes
Package Single wafer container or cassette

6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type Semi-insulating
Grow Method VGF
Dopant Undoped
Type N
Diamater(mm) 150±0.25
Orientation (100)0°±3.0°
NOTCH Orientation 〔010〕±2°
NOTCH Deepth(mm) (1-1.25)mm 89°-95°
Carrier Concentration N/A
Resistivity(ohm.cm) ＞1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s) N/A
Dislocation N/A
Thickness(µm) 675±25
Edge Exclusion for Bow and Warp(mm) N/A
Bow(µm) N/A
Warp(µm) ≤20.0
TTV(µm) ≤10.0
TIR(µm) ≤10.0
LFPD(µm) N/A
Polishing P/P Epi-Ready

2″ (50.8mm)LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications

Item Specifications Remarks
Diamater(mm) Ф 50.8mm ± 1mm
Thickness 1-2um or 2-3um
Marco Defect Density ≤ 5 cm-2
Resistivity(300K) >108 Ohm-cm
Carrier ＜0.5ps
Dislocation Density <1x106cm-2
Useable Surface Area ≥80%
Polishing Single side polished
Substrate GaAs Substrate
* We also can provide poly crystal GaAs bar, 99.9999%(6N).
Product tags

smd led chip types

,

gaas wafer

,

smd 5050 led chips
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GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics

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Product Detail
Brand Name :
PAM-XIAMEN
Place of Origin :
China
MOQ :
1-10,000pcs
Payment Terms :
T/T
Delivery Time :
5-50 working days
Price :
By Case
Contact Supplier
GaAs Wafer Include 2~6 Inch Ingot / Wafers For LED , LD And Microelectronics

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Active Member
6 Years
fujian, xiamen
Since 1990
Business Type :
Manufacturer, Exporter, Seller
Main Products :
GaN Wafer, SiC Wafer, GaAs Wafer
Total Annual :
10 Million-50 Million
Employee Number :
50~100
Certification Level :
Active Member
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