MachineU > China Products > Chemicals
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
Specifications
Brand Name :
ZMSH
Model Number :
3C-N SiC
Certification :
rohs
Place of Origin :
CHINA
MOQ :
10pc
Price :
by case
Payment Terms :
T/T
Supply Ability :
1000pc/month
Delivery Time :
in 30days
Packaging Details :
customzied plastic box
Size :
2inch,4inch,6inch,5×5,10×10
Dielectric Constant :
9.7
Surface Hardness :
HV0.3>2500
Density :
3.21 G/cm3
Thermal Expansion Coefficient :
4.5 X 10-6/K
Breakdown Voltage :
5.5 MV/cm
Applications :
Communications, Radar systems
Description

Overview of 3C-SiC Substrates

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabricated via ​​liquid phase epitaxy (LPE)​​ or ​​physical vapor transport (PVT)​​. It supports standard sizes from 2-inch to 8-inch, as well as custom dimensions (e.g., 5×5 mm, 10×10 mm). Its core advantages include ​​high electron mobility (1,100 cm²/V·s)​​, ​​wide bandgap (3.2 eV)​​, and ​​high thermal conductivity (49 W/m·K)​​, making it ideal for high-frequency, high-temperature, and high-power device applications.

​​

​​Key Characteristics​​ of 3C-SiC Substrates

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

1. Electrical Performance​​

  • ​​High Electron Mobility​​: Significantly superior to 4H-SiC (900 cm²/V·s), 3C-SiC substrates reducing conduction losses in devices.
  • ​​Low Resistivity​​: ≤0.0006 Ω·cm (N-type), 3C-SiC substrates optimized for low-loss high-frequency circuits.
  • ​​Wide Bandgap​​: Withstands voltages up to 10 kV, 3C-SiC substrates suitable for high-voltage scenarios (e.g., smart grids, EVs).

​​

2. Thermal & Chemical Stability​​

  • ​​High Thermal Conductivity​​: 3× higher heat dissipation efficiency than silicon, 3C-SiC substrates operating stably from -200°C to 1,600°C.
  • ​​Radiation Resistance​​: 3C-SiC substrates ideal for aerospace and nuclear applications.

​​

3. Process Compatibility​​

  • ​​Surface Flatness​​: λ/10 @632.8 nm, compatible with lithography and dry etching.
  • ​​Low Defect Density​​: Micro-tube density <0.1 cm⁻², enhancing device yield.

​​Core Applications​​ of 3C-SiC Substrates

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

1. 5G Communications & RF Devices​​

  • ​​Millimeter-Wave RF Modules​​: 3C-SiC substrates enables GaN-on-3C-SiC RF devices for 28 GHz+ bands, improving signal efficiency.
  • ​​Low-Loss Filters​​: 3C-SiC substrates reduces signal attenuation, boosting radar and communication sensitivity.

​​

2. Electric Vehicles (EVs)​​

  • ​​On-Board Chargers (OBC)​​: 3C-SiC substrates reduces energy loss by 40%, compatible with 800V fast-charging platforms.
  • ​​Inverters​​: 3C-SiC substrates cuts 80–90% energy loss, extending driving range.

3. ​​Industrial & Energy Systems​​

  • ​​Solar Inverters​​: Improves conversion efficiency by 1–3%, reducing volume by 40–60% for high-temperature environments.
  • ​​Smart Grids​​: Minimizes heat dissipation needs, supporting high-voltage DC transmission.

4. ​​Aerospace & Defense​​

  • ​​Radiation-Hardened Devices​​: Replaces silicon components, extending satellite and rocket system lifespans.
  • ​​High-Power Radars​​: 3C-SiC substrates leverages low-loss properties for enhanced detection precision.

3C-SiC Substrates of ​​Material Technical Parameter

​

​​Grade​​ Zero MPD Production Grade (Z Grade) Standard Production Grade (P Grade) Dummy Grade (D Grade)
Diameter 145.5 mm–150.0 mm
Thickness 350 μm ±25 μm
Wafer Orientation Off axis: 2.0°-4.0°toward [1120]± 0.5° for 4H/6H-P, On axis: 〈111〉 ± 0.5° for 3C-N
** Micropipe Density 0 cm⁻²
** Resistivity p-type 4H/6H-P ≤0.1 Ω·cm ≤0.3 Ω·cm
n-type 3C-N ≤0.8 mΩ·cm ≤1 mΩ·cm
Primary Flat Orientation 4H/6H-P {1010} ±5.0°
3C-N {110} ±5.0°
Primary Flat Length 32.5 mm ±2.0 mm
Secondary Flat Length 18.0 mm ±2.0 mm
Secondary Flat Orientation Silicon face up, 90° CW. from Prime flat ±5.0°
Edge Exclusion 3 mm 6 mm
LTV/TIV/Bow/Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
* Roughness Polish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Edge Cracks By High Intensity Light None Cumulative length≤10 mm, single length≤2 mm
* Hex Plates By High Intensity Light Cumulative area≤0.05% Cumulative area≤0.1%
* Polytype Areas By High Intensity Light None Cumulative area≤3%
Visual Carbon Inclusions None Cumulative area≤0.05%
# Silicon Surface Scratches By High Intensity Light None Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light None permitted≥0.2mm width and depth 5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity None
Packaging Multi-wafer Cassette or Single Wafer Container

Notes:

* Defects limits apply to entire wafer surface except for the edge exclusion area.

* The scratches should be checked on Si face only.

Recommend other models of SiC

Q1: What are the key applications of 2-inch, 4-inch, 6-inch, 8-inch, 5×5mm, and 10×10mm 3C-N-type SiC substrates?​​

​​A:​​ They are widely used in ​​5G RF modules​​, ​​EV power systems​​, and ​​high-temperature industrial devices​​ due to their high electron mobility and thermal stability.

​​Q2: How do 3C-N-type SiC substrates compare to traditional 4H-SiC in performance?​​

​​A:​​ 3C-N-type SiC offers ​​lower resistance​​ and ​​better high-frequency performance​​ (up to 2.7×10⁷ cm/s electron velocity), ideal for RF and compact power electronics.

Tag: #Silicon carbide substrate, #3C-N type SIC, #Semiconductor materials, #3C-SiC Substrate, #Product Grade, #5G Communications​​, #2inch/4inch/6inch/8inch/5×5 mm/10×10 mm, #MOS Grade, #4H-SiC Substrates

Send your message to this supplier
Send Now

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

Ask Latest Price
Product Detail
Brand Name :
ZMSH
Model Number :
3C-N SiC
Certification :
rohs
Place of Origin :
CHINA
MOQ :
10pc
Price :
by case
Contact Supplier
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade
2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Substrate
MachineU China Products Chemicals
Contact Supplier
Submit Requirement